Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors

2009 ◽  
Vol 94 (1) ◽  
pp. 013308 ◽  
Author(s):  
Samarendra P. Singh ◽  
Prashant Sonar ◽  
Alan Sellinger ◽  
Ananth Dodabalapur
Keyword(s):  
Field Effect ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Lateral Heterostructure

Electrical characteristics of zinc oxide-organic semiconductor lateral heterostructure based hybrid field-effect bipolar transistors

2011 ◽  
Vol 98 (7) ◽  
pp. 073302 ◽  
Author(s):  
Samarendra P. Singh ◽  
Zi-En Ooi ◽  
Serene Ng Lay Geok ◽  
Gregory K. L. Goh ◽  
Ananth Dodabalapur
Keyword(s):  
Zinc Oxide ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Lateral Heterostructure

Analysis and modelling of lateral heterostructure field-effect bipolar transistors

2011 ◽  
Vol 12 (11) ◽  
pp. 1794-1799 ◽  
Author(s):  
Zi-En Ooi ◽  
Samarendra P. Singh ◽  
Serene L.G. Ng ◽  
Gregory K.L. Goh ◽  
Ananth Dodabalapur
Keyword(s):  
Field Effect ◽  
Bipolar Transistors ◽  
Lateral Heterostructure

Effect of Surrounded-Channel Structure on Electrical Characteristics of $c$ -Axis Aligned Crystalline In–Ga–Zn–O Field-Effect Transistor

2015 ◽  
Vol 36 (4) ◽  
pp. 309-311 ◽  
Author(s):  
Yoshiyuki Kobayashi ◽  
Daisuke Matsubayashi ◽  
Suguru Hondo ◽  
Tsutomu Yamamoto ◽  
Yutaka Okazaki ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Structure ◽  
Electrical Characteristics ◽  
Effect Transistor

SILICON ON RAISED INSULATOR FIELD EFFECT DIODE (SORI-FED) FOR ALLEVIATING SCALING PROBLEM IN FED

2014 ◽  
Vol 28 (05) ◽  
pp. 1450038 ◽  
Author(s):  
MAHDI VADIZADEH ◽  
MORTEZA FATHIPOUR ◽  
GHAFAR DARVISH
Keyword(s):  
Delay Time ◽  
Field Effect ◽  
Channel Length ◽  
Gate Delay ◽  
Electrical Characteristics ◽  
Band To Band Tunneling ◽  
Main Components ◽  
Channel Lengths ◽  
Length Scaling ◽  
The Impact

One of the main shortcomings in a field effect diode (FED) is its scaling. Use of an oxide layer in the channel is proposed to enhance the control of the gate on the channel carriers. This is the so-called silicon on raised insulator FED (SORI-FFD) structure. The Shockley–Read–Hall (SRH) mechanism is one of the main components of leakage current in FED devices. The potential induced by the gates in the OFF-state of a SORI-FFD, is larger than that induced by the gates of a regular FED. This reduces, SRH recombination rate. Hence, OFF-state characteristics of the SORI-FED device improves. We evaluate the impact of band-to-band tunneling (BTBT) on the electrical characteristics of Modified FED (M-FED).We show that for channel lengths of 35 nm and lower this device does not turn off. While, the proposed structure makes device channel length scaling possible down to 15 nm. We will also compare electrical characteristics of SORI-FED and M-FED using three metrics: gate delay time versus channel length, gate delay time versus I ON /I OFF ratio and energy-delay product versus channel length. Benchmarking results show the proposed FED structure provides improvement in I ON /I OFF ratio and holds promise for future logic transistor applications.

Photoswitchable organic field-effect transistors and memory elements comprising an interfacial photochromic layer

2015 ◽  
Vol 51 (28) ◽  
pp. 6130-6132 ◽  
Author(s):  
Lyubov A. Frolova ◽  
Pavel A. Troshin ◽  
Diana K. Susarova ◽  
Alexander V. Kulikov ◽  
Nataliya A. Sanina ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors

Memory devices with superior electrical characteristics were designed using an interfacial spirooxazine layer introduced between dielectric and semiconductor layers in OFETs.

scholarly journals The impact of channel fin width on electrical characteristics of Si-FinFET

2022 ◽  
Vol 12 (1) ◽  
pp. 201
Author(s):  
Yousif Atalla ◽  
Yasir Hashim ◽  
Abdul Nasir Abd. Ghafar
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Environmental Temperature ◽  
Simulation Tool ◽  
Electrical Characteristics ◽  
Working Temperature ◽  
Effect Transistor ◽  
The Impact ◽  
The Ideal

<span>This paper studies the impact of fin width of channel on temperature and electrical characteristics of fin field-effect transistor (FinFET). The simulation tool multi-gate field effect transistor (MuGFET) has been used to examine the FinFET characteristics. Transfer characteristics with various temperatures and channel fin width (W<sub>F</sub>=5, 10, 20, 40, and 80 nm) are at first simulated in this study. The results show that the increasing of environmental temperature tends to increase threshold voltage, while the subthreshold swing (SS) and drain-induced barrier lowering (DIBL) rise with rising working temperature. Also, the threshold voltage decreases with increasing channel fin width of transistor, while the SS and DIBL increase with increasing channel fin width of transistor, at minimum channel fin width, the SS is very near to the best and ideal then its value grows and going far from the ideal value with increasing channel fin width. So, according to these conditions, the minimum value as possible of fin width is the preferable one for FinFET with better electrical characteristics.</span>

scholarly journals Полевой транзистор на протонной проводимости пленок оксида графена и нафиона

2018 ◽  
Vol 52 (3) ◽  
pp. 370
Author(s):  
В.А. Смирнов ◽  
А.Д. Мокрушин ◽  
Н.Н. Денисов ◽  
Ю.А. Добровольский
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ion Current ◽  
Negative Ion ◽  
Current Gain ◽  
Positive Bias ◽  
Electrical Characteristics ◽  
Proton Current ◽  
Effect Transistor

AbstractProton conductivity in graphene oxide and Nafion films depending on humidity and voltages across electrodes is studied in the model of a field-effect transistor. The electrical characteristics of the films are similar to one another, but the mobility of positive charges in Nafion and the current gain are higher by 2–3 orders of magnitude compared with graphene oxide. The negative ion current in graphene-oxide films at positive bias voltage is significant compared with the proton current (up to ~10%), while it is almost lacking in Nafion films (<1%).

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