Current-voltage characteristics and noise performance of a static induction transistor for video frequency

1988 ◽  
Vol 35 (7) ◽  
pp. 1130-1136 ◽  
Author(s):  
T. Tamamushi ◽  
T. Akiyama ◽  
J. Nishizawa
Keyword(s):  
Noise Performance ◽  
Current Voltage ◽  
Static Induction Transistor ◽  
Current Voltage Characteristics ◽  
Static Induction ◽  
Video Frequency

scholarly journals IMPROVED PROCESS FLOW FOR FORMATION OF BIPOLAR STATIC INDUCTION TRANSISTOR

2018 ◽  
Vol 17 (1) ◽  
pp. 72-78 ◽  
Author(s):  
N. L. Lagunovich
Keyword(s):  
Process Simulation ◽  
Electrical Characteristics ◽  
Semiconductor Wafer ◽  
Process Flow ◽  
Software Products ◽  
Virtual Production ◽  
Current Voltage ◽  
Static Induction Transistor ◽  
Current Voltage Characteristics ◽  
Static Induction

The improved process flow differs from the known ones in the fact that the same photomask is used for formation of a channel stopper and metal contacts. Such approach has made it possible not only to decrease a number of the used phototomasks but it has also permitted to obtain a device with the required electrical characteristics. The paper presnts results of device and process simulation of bipolar static induction transistor (BSIT) manufactured in accordance with the improved process flow, measuring data of electrophysical parameters of its experimental samples and also comparison of simulation results with experimental data. At present there is a large quantity of software products that permit to perform physico-topological simulation of semiconductor structures. The device-process simulation is considered as a part of such simulation and it allows prior to obtaining experimental samples to determine process flow parameters at which the investigated structure will have necessary electrical parameters and characteristics. Thus the device-process simulation represents a certain “virtual production” for manufacturing semiconductor devices and microcircuits beginning from the startup stage of semiconductor wafer at production site and finishing by electrical characteristics measurements of the obtained structure. The BSIT device simulation being an analog of direct measurements of current-voltage characteristics has been performed with help of program system MOD-1D developed by the author. The BSIT model based on the fundamental system of semiconductor equations is mainly used for calculation of the BSIT current-voltage characteristics direct branch and its parameters and charge carrier recombination is described by Shockley – Read – Hall expression and equation depicting the Auger recombination process.

scholarly journals Influence of Resonances on the Noise Performance of SQUID Susceptometers

Sensors ◽  
2019 ◽  
Vol 20 (1) ◽  
pp. 204 ◽  
Author(s):  
Samantha I. Davis ◽  
John R. Kirtley ◽  
Kathryn A. Moler
Keyword(s):  
Quantum Interference ◽  
Noise Performance ◽  
Superconducting Quantum Interference Device ◽  
Noise Characteristics ◽  
Current Voltage ◽  
Electromagnetic Resonances ◽  
Current Voltage Characteristics ◽  
Local Magnetic Fields ◽  
Scanning Squid ◽  
Further Development

Scanning Superconducting Quantum Interference Device (SQUID) Susceptometry simultaneously images the local magnetic fields and susceptibilities above a sample with sub-micron spatial resolution. Further development of this technique requires a thorough understanding of the current, voltage, and flux ( I V Φ ) characteristics of scanning SQUID susceptometers. These sensors often have striking anomalies in their current–voltage characteristics, which we believe to be due to electromagnetic resonances. The effect of these resonances on the performance of these SQUIDs is unknown. To explore the origin and impact of the resonances, we develop a model that qualitatively reproduces the experimentally-determined I V Φ characteristics of our scanning SQUID susceptometers. We use this model to calculate the noise characteristics of SQUIDs of different designs. We find that the calculated ultimate flux noise is better in susceptometers with damping resistors that diminish the resonances than in susceptometers without damping resistors. Such calculations will enable the optimization of the signal-to-noise characteristics of scanning SQUID susceptometers.

Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)

2009 ◽  
Vol 615-617 ◽  
pp. 739-742 ◽  
Author(s):  
Koji Yano ◽  
Yasunori Tanaka ◽  
Tsutomu Yatsuo ◽  
Akio Takatsuka ◽  
Kazuo Arai
Keyword(s):  
Initial Phase ◽  
Short Circuit ◽  
Output Current ◽  
Abrupt Decrease ◽  
Power Mosfets ◽  
Static Induction Transistors ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Static Induction ◽  
First Time

Short-circuit capabilities of silicon carbide static induction transistors with the buried gate structures (BGSITs) have been measured for the first time, and have been followed by 2D device simulations. The short-circuit operation of the normally-on type BGSITs is characterized by an abrupt decrease in the output current through a high peak in the initial phase of the short-circuit period, which is distinguished from that of the conventional IGBTs and power MOSFETs. This operation is caused by the inherent operation of the SITs including the non-saturating current-voltage characteristics with the unipolar operation. Decreasing the channel width adequately is a useful method to increase the short-circuit capability.

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