Analysis of floating substrate effects on the intrinsic gate capacitance of SOI MOSFETSs using two-dimensional device simulation

1993 ◽  
Vol 40 (10) ◽  
pp. 1789-1796 ◽  
Author(s):  
D. Flandre
Keyword(s):  
Device Simulation ◽  
Two Dimensional ◽  
Substrate Effects ◽  
Gate Capacitance

scholarly journals Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 91-95 ◽  
Author(s):  
A. Asenov ◽  
A. R. Brown ◽  
S. Roy ◽  
J. R. Barker
Keyword(s):  
Simulated Annealing Algorithm ◽  
Semiconductor Device ◽  
Electronic Device ◽  
Device Simulation ◽  
Power Electronic ◽  
Two Dimensional ◽  
Solution Strategy ◽  
Rectangular Grids ◽  
Annealing Algorithm ◽  
2D And 3D

Topologically rectangular grids offer simplicity and efficiency in the design of parallel semiconductor device simulators tailored for mesh connected MIMD platforms. This paper presents several approaches to the generation of topologically rectangular 2D and 3D grids. The effects of the partitioning of such grids on different processor configurations are studied. A simulated annealing algorithm is used to optimise the partitioning of 2D and 3D grids on two dimensional arrays of processors. Problems related to the discretization, parallel matrix generation and solution strategy are discussed. The use of topologically rectangular grids is illustrated through the example of power electronic device simulation.

Two-dimensional device simulation for radio frequency performance of AlGaN/GaN HEMT

2015 ◽  
Author(s):  
Lin-Qing Zhang ◽  
Hong-Fan Huang ◽  
Xiao-Yong Liu ◽  
Jin-Shan Shi ◽  
Zhuo Liu ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Device Simulation ◽  
Two Dimensional ◽  
Gan Hemt

Analysis of highly doped collector transistors by using two-dimensional process/device simulation and its application of ECL circuits

1991 ◽  
Vol 38 (8) ◽  
pp. 1840-1844 ◽  
Author(s):  
H. Goto ◽  
Y. Nagase ◽  
T. Takada ◽  
A. Tahara ◽  
Y. Momma
Keyword(s):  
Device Simulation ◽  
Two Dimensional

Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation

1995 ◽  
Author(s):  
Osamu ARISUMI ◽  
Kazuya MATSUZAWA ◽  
Naoyuki SHIGYO ◽  
Mamoru TERAUCHI ◽  
Akira NISHIYAMA ◽  
...  
Keyword(s):  
Device Simulation ◽  
Two Dimensional ◽  
Source Structure
Sign in / Sign up

Export Citation Format

Share Document