Substrate effects on the in-plane ferroelectric polarization of two-dimensional SnTe

2019 ◽  
Vol 99 (20) ◽  
Author(s):  
Zhaoming Fu ◽  
Meng Liu ◽  
Zongxian Yang
Keyword(s):  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Substrate Effects

Ferroelectric resistive switching behavior in two-dimensional materials/BiFeO3 hetero-junctions

Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 23080-23086 ◽  
Author(s):  
Yang Li ◽  
Xue-Yin Sun ◽  
Cheng-Yan Xu ◽  
Jian Cao ◽  
Zhao-Yuan Sun ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Resistive Switching Behavior ◽  
Two Dimensional Materials ◽  
Interface Modulation

We presented thickness-dependent ferroelectric resistive switching in 2D/BFO heterojunctions, which stems from ferroelectric polarization induced hetero-interface modulation.

Giant tunneling electroresistance in two-dimensional ferroelectric tunnel junctions with out-of-plane ferroelectric polarization

2020 ◽  
Vol 101 (1) ◽  
Author(s):  
Lili Kang ◽  
Peng Jiang ◽  
Hua Hao ◽  
Yanhong Zhou ◽  
Xiaohong Zheng ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Out Of Plane

Theoretical investigation of nonvolatile electrical control behavior by ferroelectric polarization switching in two-dimensional MnCl3/CuInP2S6 van der Waals heterostructures

2020 ◽  
Vol 8 (13) ◽  
pp. 4534-4541 ◽  
Author(s):  
Zheng Li ◽  
Baozeng Zhou
Keyword(s):  
Theoretical Investigation ◽  
Van Der Waals ◽  
Polarization Switching ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Electrical Control ◽  
Control Behavior ◽  
Electric Signals ◽  
Data Reading

A model of atom-thick multiferroic memory whose data writing depends on ferroelectric CuInP2S6 and data reading is based on different electric signals induced by magnetoelectrical coupling.

Mechano-ferroelectric coupling: stabilization enhancement and polarization switching in bent AgBiP2Se6 monolayers

2021 ◽  
Author(s):  
Jing Shang ◽  
Congxin Xia ◽  
Chun Tang ◽  
Chun Li ◽  
Yandong Ma ◽  
...  
Keyword(s):  
Polarization Switching ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Next Generation ◽  
Storage Devices

Two-dimensional ferroelectrics are core candidates for the development of next-generation non-volatile storage devices, which rely highly on ferroelectric stability and feasible approaches to manipulate the ferroelectric polarization and domain.

scholarly journals Defect sizing, separation, and substrate effects in ion-irradiated monolayer two-dimensional materials

2018 ◽  
Vol 98 (13) ◽  
Author(s):  
Pierce Maguire ◽  
Daniel S. Fox ◽  
Yangbo Zhou ◽  
Qianjin Wang ◽  
Maria O'Brien ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Substrate Effects ◽  
Two Dimensional Materials

scholarly journals Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Liang Lv ◽  
Fuwei Zhuge ◽  
Fengjun Xie ◽  
Xujing Xiong ◽  
Qingfu Zhang ◽  
...  
Keyword(s):  
Optoelectronic Devices ◽  
Ferroelectric Polarization ◽  
Two Dimensional

Two-dimensional electron gas and its electric control at the interface between ferroelectric and antiferromagnetic insulator studied from first principles

2015 ◽  
Vol 17 (19) ◽  
pp. 12812-12825 ◽  
Author(s):  
Vladislav Borisov ◽  
Sergey Ostanin ◽  
Ingrid Mertig
Keyword(s):  
First Principles ◽  
Electron Gas ◽  
Ferroelectric Polarization ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Oxide Interface ◽  
Two Dimensional Electron Gas ◽  
Electric Control ◽  
Dimensional Electron Gas ◽  
And Control

Using first-principles methods we demonstrate the possibility of using the ferroelectric polarization to create and control a two-dimensional electron gas at a multiferroic oxide interface.

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