Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters

K. Horio; Y. Iwatsu; H. Yanai

doi:10.1109/16.22465

Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters

IEEE Transactions on Electron Devices ◽

10.1109/16.22465 ◽

1989 ◽

Vol 36 (4) ◽

pp. 617-624 ◽

Cited By ~ 31

Author(s):

K. Horio ◽

Y. Iwatsu ◽

H. Yanai

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors

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Evaluation of the hot carrier/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00175-x ◽

2000 ◽

Vol 40 (8-10) ◽

pp. 1579-1584 ◽

Cited By ~ 5

Author(s):

J Kuchenbecker ◽

M Borgarino ◽

A Coustou ◽

R Plana ◽

J Graffeuil ◽

...

Keyword(s):

Numerical Simulation ◽

Ionizing Radiation ◽

Heterojunction Bipolar Transistors ◽

Low Complexity ◽

Bipolar Transistors ◽

Hot Carrier ◽

Radiation Induced

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Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two-dimensional numerical simulation

IEEE Transactions on Electron Devices ◽

10.1109/16.249421 ◽

1993 ◽

Vol 40 (1) ◽

pp. 35-43 ◽

Cited By ~ 41

Author(s):

L.L. Liou ◽

J.L. Ebel ◽

C.I. Huang

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Thermal Effects ◽

Bipolar Transistors ◽

Two Dimensional

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Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.766867 ◽

1999 ◽

Vol 46 (6) ◽

pp. 1081-1086 ◽

Cited By ~ 12

Author(s):

M. Sotoodeh ◽

A.H. Khalid ◽

Hong Sheng ◽

F.A. Amin ◽

T. Gokdemir ◽

...

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Direct Extraction ◽

Delay Times ◽

Double Heterojunction

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Proposal of and Numerical Simulation of Hg1-xCdxTe Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.444 ◽

1986 ◽

Vol 25 (Part 1, No. 3) ◽

pp. 444-448 ◽

Cited By ~ 9

Author(s):

Kunihiro Sakamoto ◽

Yoichi Okabe

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors

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Energy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.22464 ◽

1989 ◽

Vol 36 (4) ◽

pp. 609-616 ◽

Cited By ~ 41

Author(s):

E.M. Azoff

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Energy Transport ◽

Bipolar Transistors

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Numerical Simulation of Self-heating InGaP/GaAs Heterojunction Bipolar Transistors

Lecture Notes in Computer Science - Computational Science – ICCS 2005 ◽

10.1007/11428862_41 ◽

2005 ◽

pp. 292-299

Author(s):

Yiming Li ◽

Kuen-Yu Huang

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Self Heating

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High-frequency characterization of heterojunction bipolar transistors using numerical simulation

IEEE Transactions on Electron Devices ◽

10.1109/16.19921 ◽

1989 ◽

Vol 36 (2) ◽

pp. 233-239 ◽

Cited By ~ 20

Author(s):

B. Pejcinovic ◽

T. Tang ◽

D.H. Navon

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors

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Numerical simulation of GaAs/GaAlAs heterojunction bipolar transistors

IEEE Electron Device Letters ◽

10.1109/edl.1982.25615 ◽

1982 ◽

Vol 3 (12) ◽

pp. 403-406 ◽

Cited By ~ 44

Author(s):

P.M. Asbeck ◽

D.L. Miller ◽

R. Asatourian ◽

C.G. Kirkpatrick

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors

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The offset voltage of heterojunction bipolar transistors using two-dimensional numerical simulation with current boundary condition

IEEE Transactions on Electron Devices ◽

10.1109/16.123506 ◽

1992 ◽

Vol 39 (3) ◽

pp. 742-745 ◽

Cited By ~ 9

Author(s):

L.L. Liou ◽

J. Ebel ◽

C.I. Huang

Keyword(s):

Numerical Simulation ◽

Boundary Condition ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Two Dimensional ◽

Offset Voltage

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Small-signal microwave characteristics of heterojunction bipolar transistors using 1D numerical simulation including thermal and parasitic effects

Solid-State Electronics ◽

10.1016/0038-1101(95)00419-x ◽

1996 ◽

Vol 39 (7) ◽

pp. 1104-1108 ◽

Cited By ~ 1

Author(s):

L.L. Liou ◽

T. Jenkins ◽

J. Barrette ◽

D. Barlage ◽

R. Lee

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Small Signal ◽

Parasitic Effects ◽

1D Numerical Simulation ◽

Microwave Characteristics

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