Minority-carrier transport parameters in n-type silicon

C.H. Wang; K. Misiakos; A. Neugroschel

doi:10.1109/16.108194

Minority-carrier transport parameters in n-type silicon

IEEE Transactions on Electron Devices ◽

10.1109/16.108194 ◽

1990 ◽

Vol 37 (5) ◽

pp. 1314-1322 ◽

Cited By ~ 44

Author(s):

C.H. Wang ◽

K. Misiakos ◽

A. Neugroschel

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Transport Parameters ◽

Type Silicon

Download Full-text

VIB-6 measurement of minority-carrier transport parameters in heavily doped n-type silicon

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.22380 ◽

1985 ◽

Vol 32 (11) ◽

pp. 2555-2555

Author(s):

J.d. Alamo ◽

R.M. Swanson

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Transport Parameters ◽

Type Silicon ◽

Heavily Doped

Download Full-text

Minority-carrier transport parameters in heavily doped p-type silicon at 296 and 77 K

IEEE Transactions on Electron Devices ◽

10.1109/16.277348 ◽

1993 ◽

Vol 40 (10) ◽

pp. 1872-1875 ◽

Cited By ~ 23

Author(s):

I.-Y. Leu ◽

A. Neugroschel

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Transport Parameters ◽

Type Silicon ◽

Heavily Doped ◽

P Type

Download Full-text

Minority-carrier transport parameters in degenerate n-type silicon

IEEE Electron Device Letters ◽

10.1109/55.63044 ◽

1990 ◽

Vol 11 (12) ◽

pp. 576-578 ◽

Cited By ~ 37

Author(s):

C.H. Wang ◽

A. Neugroschel

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Transport Parameters ◽

Type Silicon

Download Full-text

Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23122 ◽

1987 ◽

Vol 34 (7) ◽

pp. 1580-1589 ◽

Cited By ~ 59

Author(s):

J.A. del Alamo ◽

R.M. Swanson

Keyword(s):

Steady State ◽

Carrier Transport ◽

Minority Carrier ◽

Transport Parameters ◽

Type Silicon ◽

Heavily Doped

Download Full-text

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

Applied Physics Letters ◽

10.1063/1.115517 ◽

1995 ◽

Vol 67 (1) ◽

pp. 88-90 ◽

Cited By ~ 4

Author(s):

D. C. Leung ◽

P. R. Nelson ◽

O. M. Stafsudd ◽

J. B. Parkinson ◽

G. E. Davis

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Type Silicon ◽

P Type

Download Full-text

Minority-carrier transport parameters in CVD diamond

Carbon ◽

10.1016/s0008-6223(98)00276-0 ◽

1999 ◽

Vol 37 (5) ◽

pp. 811-816 ◽

Cited By ~ 8

Author(s):

S. Salvatori ◽

M. C. Rossi ◽

F. Galluzzi

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Cvd Diamond ◽

Transport Parameters

Download Full-text

Measurement of the minority carrier transport parameters in heavily doped silicon

10.1109/iedm.1978.189418 ◽

1978 ◽

Cited By ~ 2

Author(s):

R. Mertens ◽

R. Van Overstraeten

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Transport Parameters ◽

Doped Silicon ◽

Heavily Doped

Download Full-text

Unified Set Of Models For Minority Carrier Transport Parameters In Heavily Doped Monosilicon And Polysilicon

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724777 ◽

2005 ◽

Author(s):

M. Johnson ◽

A.J. Strojwas ◽

D.W. Greve

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Transport Parameters ◽

Heavily Doped

Download Full-text

Measurement of minority carrier transport parameters in heavily doped shallow implanted layers

10.1109/icmts.1990.67873 ◽

1990 ◽

Author(s):

Y. Pan ◽

M. Kleefstra

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Transport Parameters ◽

Heavily Doped

Download Full-text

Measurement of the minority-carrier transport parameters in heavily doped silicon

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1980.19962 ◽

1980 ◽

Vol 27 (5) ◽

pp. 949-955 ◽

Cited By ~ 83

Author(s):

R.P. Mertens ◽

J.L. Van Meerbergen ◽

J.F. Nijs ◽

R.J. Van Overstraeten

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Transport Parameters ◽

Doped Silicon ◽

Heavily Doped

Download Full-text