scholarly journals Electrical Noise Measurements on Red Beet Vacuoles

1986 ◽  
Vol 81 (4) ◽  
pp. 1147-1150 ◽  
Author(s):  
Joël Alexandre ◽  
Jean-Paul Lassalles ◽  
Michel Thellier
Keyword(s):  
Electrical Noise ◽  
Red Beet ◽  
Noise Measurements

scholarly journals SCLC Degradation in 980 nm Pump Laser by Using Electrical Noise

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-4
Author(s):  
B. Orsal ◽  
I. Asaad
Keyword(s):  
Defect Density ◽  
Optical Power ◽  
Longitudinal Mode ◽  
Pump Laser ◽  
Electrical Noise ◽  
Noise Sources ◽  
Noise Spectral Density ◽  
Noise Current ◽  
Noise Measurements ◽  
Pump Lasers

The knowledge of the noise levels is important for pump laser diodes as it allows to study and to locate the noise sources and their origin. 980 nm fresh and aged pump lasers have been characterized by using electrical noise measurements. At 10 Hz, the spectra are dominated by () noise. Current noise spectral density (CNSD) is dominated by (). The trapping defect density near the n+n- and p+p- interfaces is related to pinching of the space-charge-limited current (SCLC) effect. An excess electrical noise due to longitudinal mode hopping is correlated with optical power fluctuations.

In situ characterization of laser diodes from wide-band electrical noise measurements

1986 ◽  
Vol 4 (7) ◽  
pp. 804-812 ◽  
Author(s):  
P. Andrekson ◽  
P. Andersson ◽  
A. Alping ◽  
S. Eng
Keyword(s):  
Laser Diodes ◽  
Wide Band ◽  
Electrical Noise ◽  
In Situ Characterization ◽  
Noise Measurements

Electrical noise measurements on magnetic films (invited)

1990 ◽  
Vol 67 (9) ◽  
pp. 4884-4888 ◽  
Author(s):  
M. B. Weissman ◽  
N. E. Israeloff
Keyword(s):  
Magnetic Films ◽  
Electrical Noise ◽  
Noise Measurements

Linewidth determination from electrical noise measurements on semiconductor lasers

1985 ◽  
Vol 21 (23) ◽  
pp. 1097 ◽  
Author(s):  
P.A. Andrekson ◽  
P. Andersson ◽  
A. Alping
Keyword(s):  
Semiconductor Lasers ◽  
Electrical Noise ◽  
Noise Measurements

Photoinduced Noise in Amorphous Semiconductor Films

1990 ◽  
Vol 192 ◽  
Author(s):  
F. Demichelis ◽  
C.F. Pirri ◽  
A. Tagliaferro
Keyword(s):  
Room Temperature ◽  
Energy Gap ◽  
Incident Light ◽  
Monochromatic Light ◽  
Amorphous Semiconductor ◽  
Schottky Barriers ◽  
Electrical Noise ◽  
Semiconductor Films ◽  
Frequency Range ◽  
Noise Measurements

ABSTRACTElectrical noise measurements have been performed on amorphous semiconductor films under irradiation with monochromatic light at different wavelengths. The Power Spectrum Densities (PSDs) of highly photoconductive undoped a-Si:H and a-SiC:H (deposited by glow discharge) in the frequency range .1 – 20 kHz are obtained at room temperature. The analysis is performed upon metal/semiconductor/ITO Schottky barriers. The PSDs vs frequency follow l/fn law and show a change of magnitude when the wavelength of the incident light is varied around the value corresponding to the energy gap.

Electrical noise measurements using a microprocessor‐based system

1978 ◽  
Vol 49 (12) ◽  
pp. 1698-1701
Author(s):  
L. F. Pender ◽  
H. J. Wintle
Keyword(s):  
Electrical Noise ◽  
Noise Measurements
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