Electrical noise measurements on magnetic films (invited)

1990 ◽  
Vol 67 (9) ◽  
pp. 4884-4888 ◽  
Author(s):  
M. B. Weissman ◽  
N. E. Israeloff
ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-4
Author(s):  
B. Orsal ◽  
I. Asaad

The knowledge of the noise levels is important for pump laser diodes as it allows to study and to locate the noise sources and their origin. 980 nm fresh and aged pump lasers have been characterized by using electrical noise measurements. At 10 Hz, the spectra are dominated by () noise. Current noise spectral density (CNSD) is dominated by (). The trapping defect density near the n+n- and p+p- interfaces is related to pinching of the space-charge-limited current (SCLC) effect. An excess electrical noise due to longitudinal mode hopping is correlated with optical power fluctuations.


1986 ◽  
Vol 4 (7) ◽  
pp. 804-812 ◽  
Author(s):  
P. Andrekson ◽  
P. Andersson ◽  
A. Alping ◽  
S. Eng

1985 ◽  
Vol 21 (23) ◽  
pp. 1097 ◽  
Author(s):  
P.A. Andrekson ◽  
P. Andersson ◽  
A. Alping

1986 ◽  
Vol 81 (4) ◽  
pp. 1147-1150 ◽  
Author(s):  
Joël Alexandre ◽  
Jean-Paul Lassalles ◽  
Michel Thellier

1990 ◽  
Vol 192 ◽  
Author(s):  
F. Demichelis ◽  
C.F. Pirri ◽  
A. Tagliaferro

ABSTRACTElectrical noise measurements have been performed on amorphous semiconductor films under irradiation with monochromatic light at different wavelengths. The Power Spectrum Densities (PSDs) of highly photoconductive undoped a-Si:H and a-SiC:H (deposited by glow discharge) in the frequency range .1 – 20 kHz are obtained at room temperature. The analysis is performed upon metal/semiconductor/ITO Schottky barriers. The PSDs vs frequency follow l/fn law and show a change of magnitude when the wavelength of the incident light is varied around the value corresponding to the energy gap.


1978 ◽  
Vol 49 (12) ◽  
pp. 1698-1701
Author(s):  
L. F. Pender ◽  
H. J. Wintle

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