Evidence from the Surface Morphology for Nonlinear Growth of Epitaxial GaAs Films

2001 ◽  
Vol 86 (11) ◽  
pp. 2377-2380 ◽  
Author(s):  
A. Ballestad ◽  
B. J. Ruck ◽  
M. Adamcyk ◽  
T. Pinnington ◽  
T. Tiedje
Keyword(s):  
Surface Morphology ◽  
Epitaxial Gaas ◽  
Nonlinear Growth ◽  
Gaas Films

scholarly journals Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

2016 ◽  
Vol 741 ◽  
pp. 012020 ◽  
Author(s):  
M O Petrushkov ◽  
M A Putyato ◽  
A K Gutakovsky ◽  
V V Preobrazhenskii ◽  
I D Loshkarev ◽  
...  
Keyword(s):  
Epitaxial Gaas ◽  
Si Substrates ◽  
Gaas Films ◽  
Lt Gaas

Role of surface band bending in residual conductivity formation in epitaxial GaAs films

1975 ◽  
Vol 30 (2) ◽  
pp. 755-763 ◽  
Author(s):  
T. N. Sitenko ◽  
I. P. Tyagulskii ◽  
V. I. Lyashenko ◽  
V. S. Lisenko
Keyword(s):  
Surface Band ◽  
Band Bending ◽  
Epitaxial Gaas ◽  
Gaas Films

Nucleation Studies of Lattice Matched and Mis-Matched Heteroepitaxial Layers Using the GaAs/AlxGa1−xP/Si System.

1989 ◽  
Vol 148 ◽  
Author(s):  
Thomas George ◽  
E. R. Weber ◽  
A.T. Wu ◽  
S. Nozaki ◽  
N. Noto ◽  
...  
Keyword(s):  
Surface Morphology ◽  
High Speed ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
Lattice Match ◽  
Bulk Properties ◽  
Surface And Interface ◽  
Intermediate Layers ◽  
Fundamental Causes ◽  
Gaas Films

ABSTRACTHeteroepitaxial growth of GaAs on Silicon substrates is being actively pursued, since this technology offers numerous potential benefits in terms of optoelectronic and high speed devices. However a complete understanding of the fundamental causes for film properties such as surface morphology and crystal quality is still lacking at the present time. We present here the results of a study of GaAs grown on Silicon substrates using AlxGa1−xP intermediate layers. This system offers the advantage of studying the effects of surface properties and bulk properties of heteroepitaxial films separately. Surface and interface properties are shown to be the dominant factors in the growth of AlxGa1−xP on Si, where the lattice match between the two materials is very good. For low Al mole fractions the layers tend to form islands indicative of 3D growth, whereas for x>0.4, the layers are planar indicative of 2D growth. Bulk properties such as the lattice constant mismatch are presumed to play a key role in the growth of GaAs on AlxGa1−xP intermediate layers, where it is shown that the GaAs still has an island type nucleation phase, even though surface and interface factors such as contamination and polar-on-nonpolar growth are avoided. In addition the nucleation of the GaAs on the AlxGa1−xP intermediate layers appears to be modified by the nature of the AlxGa1−xP layer i.e. whether the intermediate layer is in the form of islands or a planar layer. The final surface morphology and the crystalline quality of 3gtm GaAs films grown on AlxGa1−xP intermediate layers can be correlated to the initial nucleation.

scholarly journals Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

2006 ◽  
Vol 99 (9) ◽  
pp. 093514 ◽  
Author(s):  
Guy Brammertz ◽  
Yves Mols ◽  
Stefan Degroote ◽  
Vasyl Motsnyi ◽  
Maarten Leys ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoluminescence Study ◽  
Epitaxial Gaas ◽  
Gaas Films ◽  
Low Temperature Photoluminescence

Epitaxial GaAs Films Deposited by Vacuum Evaporation

1968 ◽  
Vol 39 (4) ◽  
pp. 1941-1948 ◽  
Author(s):  
John E. Davey ◽  
Titus Pankey
Keyword(s):  
Vacuum Evaporation ◽  
Epitaxial Gaas ◽  
Gaas Films

Effect of structure perfection on the photomemory in epitaxial GaAs films

1979 ◽  
Vol 62 (1) ◽  
pp. 67-71
Author(s):  
T.N. Sitenko ◽  
I.P. Tyagulskii ◽  
O.V. Snitko
Keyword(s):  
Epitaxial Gaas ◽  
Gaas Films ◽  
Effect Of Structure

scholarly journals Growth and Characterizations of Mg-doped GaAs Films

2020 ◽  
Author(s):  
Dong Fong
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

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