Carrier-Concentration Profiles of N-Type Sn and Te Doped Epitaxial GaAs Films

1967 ◽  
Vol 114 (1) ◽  
pp. 110 ◽  
Author(s):  
R. R. Moest ◽  
D. T. Lassota
Keyword(s):  
Carrier Concentration ◽  
Concentration Profiles ◽  
Epitaxial Gaas ◽  
Gaas Films

scholarly journals Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

2016 ◽  
Vol 741 ◽  
pp. 012020 ◽  
Author(s):  
M O Petrushkov ◽  
M A Putyato ◽  
A K Gutakovsky ◽  
V V Preobrazhenskii ◽  
I D Loshkarev ◽  
...  
Keyword(s):  
Epitaxial Gaas ◽  
Si Substrates ◽  
Gaas Films ◽  
Lt Gaas

Molecular Ion S2+ and SiFn+ implantations into GaAs

1989 ◽  
Vol 147 ◽  
Author(s):  
W. D. Fan ◽  
W. Y. Wang
Keyword(s):  
Carrier Concentration ◽  
Active Layer ◽  
Concentration Profiles ◽  
Carrier Distribution ◽  
Furnace Annealing ◽  
Molecular Ion ◽  
Pl Spectra ◽  
Active Layers ◽  
Activation Efficiency

AbstractMolecular ion S2+ and SiFn+ implantations into GaAs have been investigated to form very thin active layers. After implantation, the transient annealing (TA) and furnace annealing (FA) were used. The measurements of activation efficiency, mobility, carrier concentration profiles and PL spectra were carried out. The experiments show that after TA, the activation efficiency, mobility and carrier distribution are almost the same between samples implanted with S+ at an energy of 50KeV to a dose of 3×1013cm−2 and S+2 at 100KeV to 1.5×1013cm−2. It shows that the damage of S2-implanted samples can be removed by TA, and a very thin active layer can be formed by the implantation of S2+ at 50KeV. For SiFn-implanted samples, the activation efficiency and mobility. decrease with increase of the implanted ion mass. As+ co-implantation into SiF-implanted samples has been used to improve both activation efficiency and mobility. After comparison with the properties of the SiFt implantation, S2+implantation is more acceptable to form thin active layers.

Mobility and carrier‐concentration profiles ofP+ion‐implanted, isothermally annealed silicon crystals

1982 ◽  
Vol 53 (1) ◽  
pp. 774-776 ◽  
Author(s):  
T. Mitsuishi ◽  
Y. Sasaki ◽  
Huynh van Thieu ◽  
N. Yoshihiro
Keyword(s):  
Carrier Concentration ◽  
Concentration Profiles ◽  
Silicon Crystals ◽  
Ion Implanted

Role of surface band bending in residual conductivity formation in epitaxial GaAs films

1975 ◽  
Vol 30 (2) ◽  
pp. 755-763 ◽  
Author(s):  
T. N. Sitenko ◽  
I. P. Tyagulskii ◽  
V. I. Lyashenko ◽  
V. S. Lisenko
Keyword(s):  
Surface Band ◽  
Band Bending ◽  
Epitaxial Gaas ◽  
Gaas Films
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