scholarly journals Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

2006 ◽  
Vol 99 (9) ◽  
pp. 093514 ◽  
Author(s):  
Guy Brammertz ◽  
Yves Mols ◽  
Stefan Degroote ◽  
Vasyl Motsnyi ◽  
Maarten Leys ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoluminescence Study ◽  
Epitaxial Gaas ◽  
Gaas Films ◽  
Low Temperature Photoluminescence

Low temperature photoluminescence study in AlxGa1−xAs alloys in the indirect band gap region (x≳0.4)

1995 ◽  
Vol 78 (8) ◽  
pp. 5090-5097 ◽  
Author(s):  
G. Torres‐Delgado ◽  
R. Castanedo‐Perez ◽  
P. Diaz‐Arencibia ◽  
J. G. Mendoza‐Alvarez ◽  
J. L. Orozco‐Vilchis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Gap ◽  
Photoluminescence Study ◽  
Indirect Band Gap ◽  
Low Temperature Photoluminescence

Low temperature photoluminescence study of Mn-doped ZnSe nanocrystals

2017 ◽  
Vol 192 ◽  
pp. 1010-1014 ◽  
Author(s):  
Mohammed Abdul Haque ◽  
Chinmay Phadnis ◽  
Kiran G. Sonawane ◽  
Richa Gahlaut ◽  
Shailaja Mahamuni
Keyword(s):  
Low Temperature ◽  
Photoluminescence Study ◽  
Mn Doped ◽  
Znse Nanocrystals ◽  
Low Temperature Photoluminescence

A low-temperature photoluminescence study of GaAs1-xNx/GaAs multiple quantum wells

2017 ◽  
Author(s):  
M. Biswas ◽  
A. Balgarkashi ◽  
S. Singh ◽  
N. Shinde ◽  
R. L. Makkar ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Study ◽  
Low Temperature Photoluminescence

scholarly journals Growth and Characterizations of Mg-doped GaAs Films

2020 ◽  
Author(s):  
Dong Fong
Keyword(s):  
Atomic Force Microscopy ◽  
Low Temperature ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Films ◽  
Growth Method ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Mg Doped

The short research of optimization of the growth method to obtain p-type GaAs (001) layers using Si as the dopant was reported in this work. Atomic force microscopy was used to analyze the surface morphology and low-temperature photoluminescence also used to confirm the p-type of the layers.

Low temperature photoluminescence study of GaAs defect states

2020 ◽  
Vol 29 (1) ◽  
pp. 010703
Author(s):  
Jia-Yao Huang ◽  
Lin Shang ◽  
Shu-Fang Ma ◽  
Bin Han ◽  
Guo-Dong Wei ◽  
...  
Keyword(s):  
Low Temperature ◽  
Defect States ◽  
Photoluminescence Study ◽  
Low Temperature Photoluminescence

The Investigation of a Transition Layer in Epitaxial GaAs by the Low Temperature Photoluminescence Technique

1985 ◽  
Vol 89 (1) ◽  
pp. K61-K64 ◽  
Author(s):  
Yu. V. Zhilyaev ◽  
V. V. Krivolapchuk ◽  
A. V. Rodionov ◽  
V. V. Rossin ◽  
T. V. Rossina ◽  
...  
Keyword(s):  
Low Temperature ◽  
Transition Layer ◽  
Epitaxial Gaas ◽  
Low Temperature Photoluminescence
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