Substrate Bias Effects on Electron Mobility in Silicon Inversion Layers at Low Temperatures

1975 ◽  
Vol 34 (1) ◽  
pp. 15-17 ◽  
Author(s):  
A. B. Fowler
Keyword(s):  
Electron Mobility ◽  
Low Temperatures ◽  
Substrate Bias

A systematic study of the electron mobility in V-shaped quantum wires at low temperatures

2008 ◽  
Vol 43 (4) ◽  
pp. 340-351 ◽  
Author(s):  
Maria Tsetseri ◽  
Georgios P. Triberis ◽  
Margarita Tsaousidou
Keyword(s):  
Systematic Study ◽  
Electron Mobility ◽  
Low Temperatures ◽  
Quantum Wires

On the electron mobility in slightly compensated heavily doped GaAs at low temperatures

1993 ◽  
Vol 182 (1) ◽  
pp. 125-129 ◽  
Author(s):  
Doan Nhat Quang ◽  
Nguyen Nhu Dat ◽  
Dinh Van An
Keyword(s):  
Electron Mobility ◽  
Low Temperatures ◽  
Heavily Doped

Electron mobility in compensated semiconductors at low temperatures

1970 ◽  
Vol 237 (1) ◽  
pp. 16-20 ◽  
Author(s):  
R. K. Kar ◽  
M. N. Mukherjee
Keyword(s):  
Electron Mobility ◽  
Low Temperatures

Comparison of Hot Electron Mobility in h-Boron Nitride Nanosheets and Graphene under Manganese Doping

2016 ◽  
Vol 1141 ◽  
pp. 34-38 ◽  
Author(s):  
Ankur Pandya ◽  
Satyam Shinde ◽  
Prafulla K. Jha
Keyword(s):  
Electric Fields ◽  
Electron Mobility ◽  
Low Temperatures ◽  
Deformation Potential ◽  
Hot Electron ◽  
Scattering Mechanism ◽  
Manganese Doping ◽  
High Electric Fields ◽  
Acoustical Phonon ◽  
Mn Concentrations

The electron mobility is calculated for h-BN nanosheets (h-BNNSs) and graphene with and without doping of manganese at high electric fields via acoustical deformation potential (ADP) scattering mechanism and piezoelectric scattering (Polar Acoustical Phonon (PAP) mechanism at low temperatures. Calculation includes the variation of electron Fermi energy and effective mass with high electric fields and with variation of Mn concentrations. Comparison of mobility in both the cases of with and without doping is carried out. It is observed that the net electron mobility due to both ADP and PAP mechanisms in graphene is much larger than that for h-BNNS for both the cases of with and without doping of manganese at low temperatures.

Enhancement of ballistic transport in an AlGaAs∕InGaAs high electron mobility transistor at low temperatures

2007 ◽  
Vol 90 (14) ◽  
pp. 142102 ◽  
Author(s):  
Nambin Kim ◽  
Yongmin Kim ◽  
Soohyun Kang ◽  
Kyooho Jung ◽  
Woong Jung ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Temperatures ◽  
Ballistic Transport ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Effect of substrate bias on the growth behavior of iridium on A-plane sapphire using radio frequency sputtering at low temperatures

2018 ◽  
Vol 650 ◽  
pp. 65-70 ◽  
Author(s):  
Frank Meyer ◽  
Sabine Oeser ◽  
Andreas Graff ◽  
Eduard Reisacher ◽  
Eva-Regine Carl ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Low Temperatures ◽  
Growth Behavior ◽  
Substrate Bias ◽  
Radio Frequency Sputtering

Effects of ionized impurity and interface roughness scatterings on the electron mobility in InAs/GaSb type II superlattices at low temperatures

2016 ◽  
Vol 30 (32n33) ◽  
pp. 1650384
Author(s):  
S. Safa ◽  
A. Asgari
Keyword(s):  
Electron Mobility ◽  
Low Temperatures ◽  
Structural Parameters ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Type Ii ◽  
Type Ii Superlattices ◽  
Interface Roughness Scattering ◽  
Different Temperatures ◽  
Scattering Rates

The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices (SLs) at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting the electron transport at low temperatures. For this purpose, the band structures and wave functions of electrons in such SLs are calculated by solving the K.P Hamiltonian using the numerical Finite Difference method. The scattering rates have been obtained for different temperatures and structural parameters. We show that the scattering rates are high in thin-layer SLs and the mobility rises as the temperature increases in low-temperature regime.

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