Electron mobility in gases at low temperatures: The quantum mechanical Lorentz gas, I

1983 ◽  
Vol 30 (1) ◽  
pp. 67-106 ◽  
Author(s):  
T. R. Kirkpatrick ◽  
J. R. Dorfman
Keyword(s):  
Electron Mobility ◽  
Low Temperatures ◽  
Lorentz Gas ◽  
Quantum Mechanical

QUANTUM BOLTZMANN LIQUIDS

2007 ◽  
Vol 21 (13n14) ◽  
pp. 2157-2168 ◽  
Author(s):  
K. A. GERNOTH ◽  
MANFRED L. RISTIG ◽  
THOMAS LINDENAU
Keyword(s):  
Low Temperatures ◽  
Matrix Theory ◽  
Quantum Mechanical ◽  
Para Hydrogen ◽  
Path Integral Monte Carlo ◽  
Quantum Fluid ◽  
Interparticle Forces ◽  
Thermodynamic Conditions ◽  
Density Matrix Theory ◽  
Phase Phase

We study homogeneous normal systems of bosons under the influence of interparticle forces with a strongly repulsive component at short relative particle-particle distances. The repulsion prevents short-ranged exchange between the bosonic constituents in the quantum fluid. Consequently, the bosons remain distinguishable at temperatures far below the classical high-temperature regime. At these low temperatures such fluids and liquids display nevertheless distinct quantum effects due to quantum-mechanical phase-phase correlations. Typical examples are liquid para-hydrogen and fluid 4 He under certain thermodynamic conditions. The study employs Correlated Density-Matrix theory and Path-Integral Monte-Carlo simulations.

A systematic study of the electron mobility in V-shaped quantum wires at low temperatures

2008 ◽  
Vol 43 (4) ◽  
pp. 340-351 ◽  
Author(s):  
Maria Tsetseri ◽  
Georgios P. Triberis ◽  
Margarita Tsaousidou
Keyword(s):  
Systematic Study ◽  
Electron Mobility ◽  
Low Temperatures ◽  
Quantum Wires

scholarly journals Carrier Mobility in Semiconductors at Very Low Temperatures

2021 ◽  
Vol 6 (1) ◽  
pp. 86
Author(s):  
Ingo Tobehn-Steinhäuser ◽  
Manfred Reiche ◽  
Matthias Schmelz ◽  
Ronny Stolz ◽  
Thomas Fröhlich ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Low Temperatures ◽  
Carrier Mobility ◽  
Quantum Mechanical ◽  
Quantum Mechanical Calculations ◽  
Initial Concentration ◽  
Temperature Range ◽  
Type Silicon ◽  
Silicon Materials ◽  
Freeze Out

Carrier mobilities and concentrations were measured for different p- and n-type silicon materials in the temperature range 0.3–300 K. Simulations show that experimentally determined carrier mobilities are best described in this temperature range by Klaassen’s model. Freeze-out reduces the carrier concentration with decreasing temperature. Freeze-out, however, depends on the dopant type and initial concentration. Semi-classical calculations are useful only for temperatures above 100 K. Otherwise quantum mechanical calculations are required.

Prospects for the Detection of Gravity Wave Bursts

1982 ◽  
Vol 4 (4) ◽  
pp. 342-348 ◽  
Author(s):  
C. Edwards
Keyword(s):  
Gravitational Wave ◽  
Gravity Wave ◽  
Low Temperatures ◽  
Second Generation ◽  
Cryogenic Detectors ◽  
Quantum Mechanical ◽  
Third Generation ◽  
Design Sensitivities ◽  
Wave Bursts

Many excellent reviews of gravitational wave astronomy have appeared in the literature (see for example Thorne 1980 and references cited there). Much has also been written on the potential of the second generation of Weber-bar detectors which, operating at low temperatures and exploiting superconducting technology, have design sensitivities up to a million times greater than those of a decade ago. Indeed such has been the intensity of activity in this area, that even before this generation of cryogenic detectors has come of age, a third generation, quantum mechanical in outlook, is already being conceived.

On the electron mobility in slightly compensated heavily doped GaAs at low temperatures

1993 ◽  
Vol 182 (1) ◽  
pp. 125-129 ◽  
Author(s):  
Doan Nhat Quang ◽  
Nguyen Nhu Dat ◽  
Dinh Van An
Keyword(s):  
Electron Mobility ◽  
Low Temperatures ◽  
Heavily Doped

Electron mobility in compensated semiconductors at low temperatures

1970 ◽  
Vol 237 (1) ◽  
pp. 16-20 ◽  
Author(s):  
R. K. Kar ◽  
M. N. Mukherjee
Keyword(s):  
Electron Mobility ◽  
Low Temperatures

Free Carrier Absorption in N-Type 6H-SiC

1994 ◽  
Vol 339 ◽  
Author(s):  
F. Engelbrecht ◽  
R. Helbig
Keyword(s):  
Perturbation Theory ◽  
Electron Mobility ◽  
Free Carrier ◽  
Wave Number ◽  
Quantum Mechanical ◽  
Free Carrier Absorption ◽  
P Values ◽  
Classical Expression ◽  
Carrier Absorption ◽  
Good Agreement

ABSTRACTFree carrier absorption (FCA) in n-type 6H-SiC doped with nitrogen has been studied in the energy range 50–250 cm-1 using samples of different free carrier concentrations ranging from 2.0–1016cm-3 to 7.0–1017cm-3. The index of wave number dependence of FCA p varies between -1.4 and -0.55 depending on free carrier concentration and electron mobility. The experimental results are in good agreement with the classical expression for the FCA coefficient. Quantum mechanical expressions for the FCA coefficient do not reproduce the measured p values. It is supposed that this is due to fact that the requirement for the application of perturbation theory ΩT ≫ 1 is not fulfilled. We investigated the anisotropy of FCA with respect to the c-axis and find a strong difference between ∝ ┴ and ∝∥.

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