Phase-shift calculation of electron mobility inn-type silicon at low temperatures

J. R. Meyer; F. J. Bartoli

doi:10.1103/physrevb.24.2089

Phase-shift calculation of electron mobility inn-type silicon at low temperatures

Physical Review B ◽

10.1103/physrevb.24.2089 ◽

1981 ◽

Vol 24 (4) ◽

pp. 2089-2100 ◽

Cited By ~ 51

Author(s):

J. R. Meyer ◽

F. J. Bartoli

Keyword(s):

Phase Shift ◽

Electron Mobility ◽

Low Temperatures ◽

Type Silicon ◽

Shift Calculation

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Phase-shift calculation of ionized impurity scattering in semiconductors

Physical Review B ◽

10.1103/physrevb.23.5413 ◽

1981 ◽

Vol 23 (10) ◽

pp. 5413-5427 ◽

Cited By ~ 86

Author(s):

J. R. Meyer ◽

F. J. Bartoli

Keyword(s):

Phase Shift ◽

Impurity Scattering ◽

Ionized Impurity Scattering ◽

Shift Calculation

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Impurity core effects on electron mobility in N type silicon

Journal of Physics C Solid State Physics ◽

10.1088/0022-3719/5/24/010 ◽

1972 ◽

Vol 5 (24) ◽

pp. 3473-3476 ◽

Cited By ~ 7

Author(s):

O P Daga ◽

W S Khokle

Keyword(s):

Electron Mobility ◽

Type Silicon

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Electron-phonon interactions in n-type silicon inversion layers at low temperatures

Surface Science Letters ◽

10.1016/0167-2584(80)90627-1 ◽

1980 ◽

Vol 98 (1-3) ◽

pp. A295

Author(s):

Kit Man Cham ◽

R.G. Wheeler

Keyword(s):

Low Temperatures ◽

Type Silicon

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Electron mobility in enhanced N-type silicon nanowire MOSFET

2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems ◽

10.1109/nems.2009.5068768 ◽

2009 ◽

Cited By ~ 2

Author(s):

Jie Chen ◽

Tao Guo ◽

Hang Guo

Keyword(s):

Electron Mobility ◽

Silicon Nanowire ◽

Type Silicon ◽

Silicon Nanowire Mosfet ◽

Nanowire Mosfet

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Theory of screening and electron mobility: Application ton-type silicon

Physical Review B ◽

10.1103/physrevb.46.15123 ◽

1992 ◽

Vol 46 (23) ◽

pp. 15123-15134 ◽

Cited By ~ 14

Author(s):

B. A. Sanborn ◽

P. B. Allen ◽

G. D. Mahan

Keyword(s):

Electron Mobility ◽

Type Silicon

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Effect of a Magnetic Field on Microwave Absorption in P-Type Silicon at Low Temperatures

Journal of the Physical Society of Japan ◽

10.1143/jpsj.19.1749 ◽

1964 ◽

Vol 19 (9) ◽

pp. 1749-1749

Author(s):

Shoji Tanaka ◽

Kunimitsu Uchinokura

Keyword(s):

Magnetic Field ◽

Microwave Absorption ◽

Low Temperatures ◽

Type Silicon ◽

P Type

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An infra-red study of defects produced in n-type silicon by electron irradiation at low temperatures

Solid State Communications ◽

10.1016/0038-1098(71)90175-x ◽

1971 ◽

Vol 9 (4) ◽

pp. 271-274 ◽

Cited By ~ 38

Author(s):

A.R. Bean ◽

R.C. Newman

Keyword(s):

Electron Irradiation ◽

Low Temperatures ◽

Type Silicon ◽

Infra Red

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Phase-shift calculation using continuum-discretized states

Nuclear Physics A ◽

10.1016/j.nuclphysa.2009.03.004 ◽

2009 ◽

Vol 823 (1-4) ◽

pp. 1-15 ◽

Cited By ~ 13

Author(s):

Y. Suzuki ◽

W. Horiuchi ◽

K. Arai

Keyword(s):

Phase Shift ◽

Shift Calculation

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Electron mobility in gases at low temperatures: The quantum mechanical Lorentz gas, I

Journal of Statistical Physics ◽

10.1007/bf01010869 ◽

1983 ◽

Vol 30 (1) ◽

pp. 67-106 ◽

Cited By ~ 17

Author(s):

T. R. Kirkpatrick ◽

J. R. Dorfman

Keyword(s):

Electron Mobility ◽

Low Temperatures ◽

Lorentz Gas ◽

Quantum Mechanical

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EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN AN INVERSION LAYER ON p‐TYPE SILICON

Applied Physics Letters ◽

10.1063/1.1754005 ◽

1964 ◽

Vol 4 (8) ◽

pp. 145-147 ◽

Cited By ~ 15

Author(s):

F. Fang ◽

S. Triebwasser

Keyword(s):

Electron Mobility ◽

Inversion Layer ◽

Surface Scattering ◽

Type Silicon ◽

P Type ◽

Effect Of Surface

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