scholarly journals Giant exciton-phonon coupling and zero-point renormalization in hexagonal monolayer boron nitride

2019 ◽  
Vol 99 (16) ◽  
Author(s):  
Himani Mishra ◽  
Sitangshu Bhattacharya
2018 ◽  
Vol 98 (23) ◽  
Author(s):  
Ferenc Karsai ◽  
Moritz Humer ◽  
Espen Flage-Larsen ◽  
Peter Blaha ◽  
Georg Kresse

2016 ◽  
Vol 18 (4) ◽  
pp. 2672-2681 ◽  
Author(s):  
P. Anees ◽  
M. C. Valsakumar ◽  
B. K. Panigrahi

We report the effect of strong anharmonic phonon–phonon coupling on the temperature dependent structural stability, frequency shift and linewidth of 2D h-BN.


2016 ◽  
Vol 7 (2) ◽  
pp. 289-294 ◽  
Author(s):  
Leonid Gilburd ◽  
Xiaoji G. Xu ◽  
Yoshio Bando ◽  
Dmitri Golberg ◽  
Gilbert C. Walker

2021 ◽  
Vol 103 (11) ◽  
Author(s):  
Manabendra Kuiri ◽  
Saurabh Kumar Srivastav ◽  
Sujay Ray ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  

Nanophotonics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 3483-3504 ◽  
Author(s):  
Bernard Gil ◽  
Guillaume Cassabois ◽  
Ramon Cusco ◽  
Giorgia Fugallo ◽  
Lluis Artus

AbstractWe review the recent progress regarding the physics and applications of boron nitride bulk crystals and its epitaxial layers in various fields. First, we highlight its importance from optoelectronics side, for simple devices operating in the deep ultraviolet, in view of sanitary applications. Emphasis will be directed towards the unusually strong efficiency of the exciton–phonon coupling in this indirect band gap semiconductor. Second, we shift towards nanophotonics, for the management of hyper-magnification and of medical imaging. Here, advantage is taken of the efficient coupling of the electromagnetic field with some of its phonons, those interacting with light at 12 and 6 µm in vacuum. Third, we present the different defects that are currently studied for their propensity to behave as single photon emitters, in the perspective to help them becoming challengers of the NV centres in diamond or of the double vacancy in silicon carbide in the field of modern and developing quantum technologies.


Nanoscale ◽  
2016 ◽  
Vol 8 (7) ◽  
pp. 4037-4046 ◽  
Author(s):  
Zhequan Yan ◽  
Liang Chen ◽  
Mina Yoon ◽  
Satish Kumar

h-BN/graphene/h-BN sandwiched systems exhibit distinct stacking-dependent phonon transport features. We provide a new analysis method to understand the physical mechanism of phonon–phonon coupling and the phonon modes’ contributions to the thermal boundary conductance at SLG/h-BN interfaces.


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