scholarly journals Phonon transport at the interfaces of vertically stacked graphene and hexagonal boron nitride heterostructures

Nanoscale ◽  
2016 ◽  
Vol 8 (7) ◽  
pp. 4037-4046 ◽  
Author(s):  
Zhequan Yan ◽  
Liang Chen ◽  
Mina Yoon ◽  
Satish Kumar
Keyword(s):  
Boron Nitride ◽  
Physical Mechanism ◽  
Hexagonal Boron Nitride ◽  
Phonon Transport ◽  
Analysis Method ◽  
Phonon Coupling ◽  
Phonon Modes ◽  
Thermal Boundary Conductance

h-BN/graphene/h-BN sandwiched systems exhibit distinct stacking-dependent phonon transport features. We provide a new analysis method to understand the physical mechanism of phonon–phonon coupling and the phonon modes’ contributions to the thermal boundary conductance at SLG/h-BN interfaces.

Phonon transport in antisite-substituted hexagonal boron nitride nanosheets: A molecular dynamics study

2020 ◽  
Vol 128 (23) ◽  
pp. 234304
Author(s):  
Man Zhou ◽  
Ting Liang ◽  
Bingyang Wu ◽  
Jiaju Liu ◽  
Ping Zhang
Keyword(s):  
Molecular Dynamics ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Phonon Transport ◽  
Boron Nitride Nanosheets

scholarly journals Thermal Boundary Conductance and Phonon Transmission in Hexagonal Boron Nitride/Graphene Heterostructures

2019 ◽  
Vol 216 (23) ◽  
pp. 1900446 ◽  
Author(s):  
David B. Brown ◽  
Thomas L. Bougher ◽  
Xiang Zhang ◽  
Pulickel M. Ajayan ◽  
Baratunde A. Cola ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Thermal Boundary Conductance

scholarly journals Optical Contrast and Raman Spectroscopy Techniques Applied to Few-Layer 2D Hexagonal Boron Nitride

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1047 ◽  
Author(s):  
Marie Krečmarová ◽  
Daniel Andres-Penares ◽  
Ladislav Fekete ◽  
Petr Ashcheulov ◽  
Alejandro Molina-Sánchez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Boron Nitride ◽  
Phonon Mode ◽  
Hexagonal Boron Nitride ◽  
Linear Trend ◽  
Thickness Dependence ◽  
Two Dimensional ◽  
Phonon Modes ◽  
Optical Contrast ◽  
Si Substrates

The successful integration of few-layer thick hexagonal boron nitride (hBN) into devices based on two-dimensional materials requires fast and non-destructive techniques to quantify their thickness. Optical contrast methods and Raman spectroscopy have been widely used to estimate the thickness of two-dimensional semiconductors and semi-metals. However, they have so far not been applied to two-dimensional insulators. In this work, we demonstrate the ability of optical contrast techniques to estimate the thickness of few-layer hBN on SiO2/Si substrates, which was also measured by atomic force microscopy. Optical contrast of hBN on SiO2/Si substrates exhibits a linear trend with the number of hBN monolayers in the few-layer thickness range. We also used bandpass filters (500–650 nm) to improve the effectiveness of the optical contrast methods for thickness estimations. We also investigated the thickness dependence of the high frequency in-plane E2g phonon mode of atomically thin hBN on SiO2/Si substrates by micro-Raman spectroscopy, which exhibits a weak thickness-dependence attributable to the in-plane vibration character of this mode. Ab initio calculations of the Raman active phonon modes of atomically thin free-standing crystals support these results, even if the substrate can reduce the frequency shift of the E2g phonon mode by reducing the hBN thickness. Therefore, the optical contrast method arises as the most suitable and fast technique to estimate the thickness of hBN nanosheets.

scholarly journals Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride

Nano Letters ◽  
2013 ◽  
Vol 13 (2) ◽  
pp. 550-554 ◽  
Author(s):  
Insun Jo ◽  
Michael Thompson Pettes ◽  
Jaehyun Kim ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Phonon Transport

Predicting Phonon Transport in Two-Dimensional Boron Nitride-Graphene Superlattices

2014 ◽  
Author(s):  
Carlos da Silva ◽  
Julia Sborz ◽  
David A. Romero ◽  
Cristina H. Amon
Keyword(s):  
Boron Nitride ◽  
Normal Mode Analysis ◽  
Phonon Transport ◽  
Mode Analysis ◽  
Spectral Energy ◽  
Phonon Modes ◽  
Support Engineering ◽  
Group Velocities ◽  
Phonon Properties

The synthesis of boron nitride (BN) - graphene hybrid materials is now a reality that has opened opportunities for creation of new nanostructures with enhanced mechanical, electronic and thermal properties, of particular interest for nanoelectronics applications. Properties of these materials are still not well understood, and modelling approaches are needed to support engineering design of these novel nanostructures. In this work, we study thermal transport in BN-graphene superlattices from a phonon transport perspective. We predict phonon properties (phonon group velocities and phonon lifetimes) using normal mode analysis based on phonon spectral energy density (SED) in these superlattices, with especial emphasis on the role of the orientation of the atoms at the BN - graphene interfaces. We consider various superlattices compositions with two highly symmetric orientation, i.e., zig-zag and armchair. Our results show that phonon group velocities are higher for the zig-zag interface orientation. We also found that phonon modes at small frequencies are more sensitive to the superlattice configurations.

Effects of electron-phonon coupling on absorption spectrum: K edge of hexagonal boron nitride

2018 ◽  
Vol 98 (23) ◽  
Author(s):  
Ferenc Karsai ◽  
Moritz Humer ◽  
Espen Flage-Larsen ◽  
Peter Blaha ◽  
Georg Kresse
Keyword(s):  
Absorption Spectrum ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Phonon Coupling ◽  
Electron Phonon Coupling

scholarly journals Enhancing the electronic and phonon transport properties of two-dimensional hexagonal boron nitride through oxygenation: A first principles study

2020 ◽  
Vol 533 ◽  
pp. 147513
Author(s):  
Basant Roondhe ◽  
Vaishali Sharma ◽  
Hardik L. Kagdada ◽  
Dheeraj K. Singh ◽  
Tanusri Saha Dasgupta ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Transport Properties ◽  
First Principles ◽  
Hexagonal Boron Nitride ◽  
Phonon Transport ◽  
Two Dimensional ◽  
First Principles Study

scholarly journals Mechanical decoupling of quantum emitters in hexagonal boron nitride from low-energy phonon modes

2020 ◽  
Vol 6 (40) ◽  
pp. eaba6038 ◽  
Author(s):  
Michael Hoese ◽  
Prithvi Reddy ◽  
Andreas Dietrich ◽  
Michael K. Koch ◽  
Konstantin G. Fehler ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Boron Nitride ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Phonon Modes ◽  
Out Of Plane ◽  
The Fourier Transform ◽  
Mechanical Decoupling ◽  
Quantum Emitters

Quantum emitters in hexagonal boron nitride were recently reported to hold unusual narrow homogeneous linewidths of tens of megahertz within the Fourier transform limit at room temperature. This unique observation was traced back to decoupling from in-plane phonon modes. Here, we investigate the origins for the mechanical decoupling. New sample preparation improved spectral diffusion, which allowed us to reveal a gap in the electron-phonon spectral density for low phonon frequencies. This sign for mechanical decoupling persists up to room temperature and explains the observed narrow lines at 300 kelvin. We investigate the dipole emission directionality and reveal preferred photon emission through channels between the layers supporting the claim for out-of-plane distorted defect centers. Our work provides insights into the underlying physics for the persistence of Fourier transform limit lines up to room temperature and gives a guide to the community on how to identify the exotic emitters.

Effect of strong phonon–phonon coupling on the temperature dependent structural stability and frequency shift of 2D hexagonal boron nitride

2016 ◽  
Vol 18 (4) ◽  
pp. 2672-2681 ◽  
Author(s):  
P. Anees ◽  
M. C. Valsakumar ◽  
B. K. Panigrahi
Keyword(s):  
Boron Nitride ◽  
Frequency Shift ◽  
Structural Stability ◽  
Hexagonal Boron Nitride ◽  
Phonon Coupling ◽  
Temperature Dependent ◽  
Stability Frequency

We report the effect of strong anharmonic phonon–phonon coupling on the temperature dependent structural stability, frequency shift and linewidth of 2D h-BN.

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