Exciton-dielectric mode coupling in MoS2 nanoflakes visualized by cathodoluminescence

Two-dimensional (2D) transition metal dichalcogenides (TMDCs), possessing unique exciton luminescence properties, have attracted significant attention for use in optical and electrical devices. TMDCs are also high refractive index materials that can strongly confine the electromagnetic field in nanoscale dimensions when patterned into nanostructures, thus resulting in complex light emission that includes exciton and dielectric resonances. Here, we use cathodoluminescence (CL) to experimentally visualize the emission modes of single molybdenum disulfide (MoS2) nanoflakes and to investigate luminescence enhancement due to dielectric resonances in nanoscale dimensions, by using a scanning transmission electron microscope. Specifically, we identify dielectric modes whose resonant wavelength is sensitive to the shape and size of the nanoflake, and exciton emission peaks whose energies are insensitive to the geometry of the flakes. Using a four-dimensional CL method and boundary element method simulations, we further theoretically and experimentally visualize the emission polarization and angular emission patterns, revealing the coupling of the exciton and dielectric resonant modes. Such nanoscopic observation provides a detailed understanding of the optical responses of MoS2 including modal couplings of excitons and dielectric resonances which play a crucial role in the development of energy conversion devices, single-photon emitters, and nanophotonic circuits with enhanced light-matter interactions.

Comparison of back focal plane imaging of nitrogen vacancy centers in nanodiamond and core-shell CdSe/CdS quantum dots

We report on the characterization of the angular-dependent emission of two different single-photon emitters based on nitrogen-vacancy centers in nanodiamond and on core-shell CdSe/CdS quantum dot nanoparticles. The emitters were characterized in a confocal microscope setup by spectroscopy and Hanbury-Brown and Twiss interferometry. The angular-dependent emission is measured using a back focal plane imaging technique. A theoretical model of the angular emission patterns of the 2D dipoles of the emitters is developed to determine their orientation. Experiment and model agree well with each other.

Protocol for generation of high-dimensional entanglement from an array of non-interacting photon emitters

Encoding high-dimensional quantum information into single photons can provide a variety of benefits for quantum technologies, such as improved noise resilience. However, the efficient generation of high-dimensional entanglement was thought to be out of reach for current and near-future photonic quantum technologies. We present a protocol for the near-deterministic generation of N-photon, d-dimensional photonic Greenberger-Horne-Zeilinger (GHZ) states using an array of d non-interacting single-photon emitters. We analyse the impact on performance of common sources of error for quantum emitters, such as photon spectral distinguishability and temporal mismatch, and find they are readily correctable with time-resolved detection to yield high fidelity GHZ states of multiple qudits. When applied to a quantum key distribution scenario, our protocol exhibits improved loss tolerance and key rates when increasing the dimensionality beyond binary encodings.

Site-controlled telecom-wavelength single-photon emitters in atomically-thin MoTe2

Quantum emitters (QEs) in two-dimensional transition metal dichalcogenides (2D TMDCs) have advanced to the forefront of quantum communication and transduction research. To date, QEs capable of operating in O-C telecommunication bands have not been demonstrated in TMDCs. Here we report site-controlled creation of telecom QEs emitting over the 1080 to 1550 nm telecommunication wavelength range via coupling of 2D molybdenum ditelluride (MoTe2) to strain inducing nano-pillar arrays. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching with 90% single-photon purity. The photon antibunching can be observed up to liquid nitrogen temperature (77 K). Polarization analysis further reveals that while some QEs display cross-linearly polarized doublets with ~1 meV splitting resulting from the strain induced anisotropic exchange interaction, valley degeneracy is preserved in other QEs. Valley Zeeman splitting as well as restoring of valley symmetry in cross-polarized doublets are observed under 8 T magnetic field.

Contact spacing controls the on-current for all-carbon field effect transistors

All-carbon field-effect transistors, which combine carbon nanotubes and graphene hold great promise for many applications such as digital logic devices and single-photon emitters. However, the understanding of the physical properties of carbon nanotube (CNT)/graphene hybrid systems in such devices remained limited. In this combined experimental and theoretical study, we use a quantum transport model for field-effect transistors based on graphene electrodes and CNT channels to explain the experimentally observed low on currents. We find that large graphene/CNT spacing and short contact lengths limit the device performance. We have also elucidated in this work the experimentally observed ambipolar transport behavior caused by the flat conduction- and valence-bands and describe non-ideal gate-control of the contacts and channel region by the quantum capacitance of graphene and the carbon nanotube. We hope that our insights will accelerate the design of efficient all-carbon field-effect transistors.

Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas

Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe2 to high-refractive-index gallium phosphide dielectric nano-antennas providing both optical enhancement and monolayer deformation. For single photon emitters formed on such nano-antennas, we find very low (femto-Joule) saturation pulse energies and up to 104 times brighter photoluminescence than in WSe2 placed on low-refractive-index SiO2 pillars. We show that the key to these observations is the increase on average by a factor of 5 of the quantum efficiency of the emitters coupled to the nano-antennas. This further allows us to gain new insights into their photoluminescence dynamics, revealing the roles of the dark exciton reservoir and Auger processes. We also find that the coherence time of such emitters is limited by intrinsic dephasing processes. Our work establishes dielectric nano-antennas as a platform for high-efficiency quantum light generation in monolayer semiconductors.