scholarly journals Gate-tunable Rashba spin-orbit coupling and spin polarization at diluted oxide interfaces

2019 ◽  
Vol 100 (12) ◽  
Author(s):  
Yulin Gan ◽  
Yu Zhang ◽  
Dennis Valbjørn Christensen ◽  
Nini Pryds ◽  
Yunzhong Chen
Keyword(s):  
Spin Polarization ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Oxide Interfaces ◽  
Rashba Spin

Optical Manipulation of Rashba Spin–Orbit Coupling at SrTiO3-Based Oxide Interfaces

Nano Letters ◽  
2017 ◽  
Vol 17 (11) ◽  
pp. 6534-6539 ◽  
Author(s):  
Long Cheng ◽  
Laiming Wei ◽  
Haixing Liang ◽  
Yuedong Yan ◽  
Guanghui Cheng ◽  
...  
Keyword(s):  
Orbit Coupling ◽  
Optical Manipulation ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Oxide Interfaces ◽  
Rashba Spin

SPIN POLARIZATION AND TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC/SEMICONDUCTOR/FERROMAGNETIC HETEROSTRUCTURE

2008 ◽  
Vol 22 (27) ◽  
pp. 2667-2676 ◽  
Author(s):  
DE LIU ◽  
HONGMEI ZHANG
Keyword(s):  
Spin Polarization ◽  
Coupling Strength ◽  
Channel Length ◽  
Ferromagnetic Semiconductor ◽  
Orbit Coupling ◽  
Tunneling Magnetoresistance ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin ◽  
Left And Right

Based on the coherent quantum transport theory, the spin polarization and tunneling magnetoresistance for polarized electrons through ferromagnetic/semiconductor/ferromagnetic (FM/SM/FM) heterostructure are studied theoretically within the Landauer framework of ballistic transport. The significant quantum size, quantum coherent, angle between the magnetic moments of the left and right ferromagnets, and Rashba spin-orbit interaction are considered simultaneously. The results indicate that the spin polarization and tunneling magnetoresistance are periodic functions of the semiconductor channel length, quasiperiodic functions of the Rashba spin-orbit coupling strength, and depend on the relative orientation of the two magnetizations in the left and right ferromagnets. A moderate angle, semiconductor channel length, and Rashba spin-orbit coupling strength allow a giant spin polarization or tunneling magnetoresistance. The results may be of relevance for the implementation of quasi-one-dimensional spin-transistor devices.

scholarly journals Density inhomogeneities and Rashba spin-orbit coupling interplay in oxide interfaces

2019 ◽  
Vol 128 ◽  
pp. 118-129 ◽  
Author(s):  
N. Bovenzi ◽  
S. Caprara ◽  
M. Grilli ◽  
R. Raimondi ◽  
N. Scopigno ◽  
...  
Keyword(s):  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Oxide Interfaces ◽  
Rashba Spin ◽  
Density Inhomogeneities

Spin-polarization in a 3-terminal conductor induced by Rashba spin–orbit coupling

2005 ◽  
Vol 29 (3-4) ◽  
pp. 490-494 ◽  
Author(s):  
M. Yamamoto ◽  
J. Ohea ◽  
T. Ohtsuki ◽  
J. Nitta ◽  
B. Kramer
Keyword(s):  
Spin Polarization ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Rashba Spin
Sign in / Sign up

Export Citation Format

Share Document