scholarly journals Transport coefficients of graphene: Interplay of impurity scattering, Coulomb interaction, and optical phonons

2016 ◽  
Vol 93 (19) ◽  
Author(s):  
Hong-Yi Xie ◽  
Matthew S. Foster
Keyword(s):  
Coulomb Interaction ◽  
Transport Coefficients ◽  
Impurity Scattering ◽  
Optical Phonons

The peculiar behaviour of transport coefficients in the presence of inelastic scattering by optical phonons

1975 ◽  
Vol 72 (1) ◽  
pp. 221-228 ◽  
Author(s):  
A. F. Kravchenko ◽  
S. Kubálková ◽  
B. V. Morozov ◽  
V. G. Polovinkin ◽  
E. M. Skok
Keyword(s):  
Inelastic Scattering ◽  
Transport Coefficients ◽  
Optical Phonons ◽  
Peculiar Behaviour

Some comments on the scattering of charge carriers by optical phonons

1969 ◽  
Vol 47 (20) ◽  
pp. 2261-2264 ◽  
Author(s):  
R. Kužel
Keyword(s):  
Relaxation Time ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Transport Coefficients ◽  
Charge Carriers ◽  
Optical Phonons ◽  
Optical Phonon Scattering

The exponent r in the expression [Formula: see text], for the relaxation time due to optical phonon scattering, has been calculated for some of the transport coefficients. The variation of r with temperature is discussed.

Impurity scattering in quantum wires with Coulomb interaction

1995 ◽  
Vol 99 (3-4) ◽  
pp. 583-585
Author(s):  
M. Fabrizio ◽  
A. O. Gogolin ◽  
S. Scheidl
Keyword(s):  
Coulomb Interaction ◽  
Quantum Wires ◽  
Impurity Scattering

Electrical and thermal conductivity of heavily doped n-type silicon

2020 ◽  
Vol 90 (1) ◽  
pp. 10102
Author(s):  
Mulugeta Habte Gebru
Keyword(s):  
Thermal Conductivity ◽  
Density Of States ◽  
Phonon Scattering ◽  
Transport Coefficients ◽  
Impurity Scattering ◽  
Boltzmann Transport ◽  
Scattering Mechanism ◽  
Heavily Doped ◽  
Classical And Quantum Mechanics ◽  
Band Tails

In this paper electrical and thermal conductivity coefficients of heavily doped n-Silicon have been derived based on parabolic and modified density of states having band tails. The derivation uses Boltzmann transport equation with relaxation time arising from ionized impurity scattering mechanism as a dominant scattering mechanism compared to the phonon scattering mechanism where the calculations are made at room temperature. Note that semi-classical and quantum mechanics treatments are employed during discussion of scattering mechanisms and calculation of transport coefficients for parabolic and modified density of states having band tails considerations. There is significant variation of electrical and thermal conductivity as well as Weidman-Franz ratio as much as 30%, 101.86%, and 0.66% respectively.

SOME TRANSPORT COEFFICIENTS IN n-TYPE DEGENERATE SEMICONDUCTORS

1967 ◽  
Vol 45 (7) ◽  
pp. 2385-2393 ◽  
Author(s):  
Satish Sharma
Keyword(s):  
Hall Coefficient ◽  
Hall Mobility ◽  
Transport Coefficients ◽  
Impurity Scattering ◽  
Degenerate Semiconductors ◽  
Ionized Impurity Scattering ◽  
Lorentz Number

In this paper the author has studied the variation of Lorentz number, Hall coefficient, magnetoresistance, and Hall mobility with impurity parameter. The effect of ionized impurity scattering has also been considered.

scholarly journals Soft Sphere Model for Electron Correlation and Scattering in the Atomistic Modelling of Semiconductor Devices

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 441-446
Author(s):  
J. R. Watling ◽  
J. R. Barker ◽  
A. Asenov
Keyword(s):  
Charge Distribution ◽  
Coulomb Interaction ◽  
Electron Correlation ◽  
Impurity Scattering ◽  
Spatial Distributions ◽  
Sphere Model ◽  
Soft Sphere ◽  
Carrier Scattering ◽  
Atomistic Modelling ◽  
Large Ensembles

As MOSFET devices within the deep sub-micron regime are modelled, it is no longer feasible to represent the charged dopants by a continuous charge distribution. In this regime an ensemble of devices, each with different spatial distributions and the number of dopants, must be modelled. However, it is computationally prohibitive to solve for the full Coulomb interaction required for particle simulators, especially for an ensemble of devices. To address this point, the paper focuses on the issue of modelling the dynamics in the presence of discrete carrier–carrier scattering and carrier-fixed impurity scattering which is suitable for efficient simulations of large ensembles of devices.

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