SOME TRANSPORT COEFFICIENTS IN n-TYPE DEGENERATE SEMICONDUCTORS

1967 ◽  
Vol 45 (7) ◽  
pp. 2385-2393 ◽  
Author(s):  
Satish Sharma
Keyword(s):  
Hall Coefficient ◽  
Hall Mobility ◽  
Transport Coefficients ◽  
Impurity Scattering ◽  
Degenerate Semiconductors ◽  
Ionized Impurity Scattering ◽  
Lorentz Number

In this paper the author has studied the variation of Lorentz number, Hall coefficient, magnetoresistance, and Hall mobility with impurity parameter. The effect of ionized impurity scattering has also been considered.

Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement

2016 ◽  
Vol 858 ◽  
pp. 441-444 ◽  
Author(s):  
Masatoshi Tsujimura ◽  
Hidenori Kitai ◽  
Hiromu Shiomi ◽  
Kazutoshi Kojima ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Mobility ◽  
Impurity Scattering ◽  
Gate Oxide ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Free Carriers ◽  
Scattering Mechanisms ◽  
Ionized Impurity Scattering ◽  
Similar Temperature

In this study, 4H–SiC inversion layers were experimentally evaluated by Hall and split C–V measurements, and scattering mechanisms related to gate oxide nitridation were analyzed. Three typical samples with different crystal plane directions and gate oxidation conditions were prepared, and their total trap density and Hall mobility were compared. Based on the temperature dependence of the Hall mobility, we found that scattering mechanisms differed for each sample. The sample C-face oxynitride which had a high nitrogen density at the metal–oxide–semiconductor (MOS) interface, showed a similar temperature dependency to that of ionized impurity scattering. This result suggests that high-density nitrogen acts as donors that supply free carriers and cause ionized impurity scattering, just like in a bulk crystal. In addition, the sample C-face wet has lowest influence of the Coulomb scattering because of the lowest temperature dependence of Hall mobility and the lowest total trap density.

Ionized Impurity Scattering in Degenerate Many-Valley Semiconductors

1964 ◽  
Vol 135 (3A) ◽  
pp. A779-A784 ◽  
Author(s):  
John E. Robinson ◽  
Sergio Rodriguez
Keyword(s):  
Impurity Scattering ◽  
Ionized Impurity Scattering

Ionized impurity scattering in semimetals

1980 ◽  
Vol 22 (8) ◽  
pp. 3935-3938 ◽  
Author(s):  
R. Resta ◽  
L. Resca
Keyword(s):  
Impurity Scattering ◽  
Ionized Impurity Scattering
Sign in / Sign up

Export Citation Format

Share Document