Some comments on the scattering of charge carriers by optical phonons

1969 ◽  
Vol 47 (20) ◽  
pp. 2261-2264 ◽  
Author(s):  
R. Kužel
Keyword(s):  
Relaxation Time ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Transport Coefficients ◽  
Charge Carriers ◽  
Optical Phonons ◽  
Optical Phonon Scattering

The exponent r in the expression [Formula: see text], for the relaxation time due to optical phonon scattering, has been calculated for some of the transport coefficients. The variation of r with temperature is discussed.

scholarly journals Influence of Confined Phonons on the Hall Coefficient in a Cylindrycal Quantum wire with an infinite potential (for electron – confined optical phonon scattering)

2019 ◽  
Vol 35 (3) ◽  
Author(s):  
Pham Ngoc Thang ◽  
Le Thai Hung ◽  
Do Tuan Long ◽  
Nguyen Quang Bau
Keyword(s):  
Magnetic Field ◽  
Hall Coefficient ◽  
Optical Phonon ◽  
Quantum Wire ◽  
Phonon Scattering ◽  
Constant Electric Field ◽  
Optical Phonons ◽  
Phonon Confinement ◽  
Optical Phonon Scattering ◽  
Analytical Expressions

The influence of confined optical phonons on the Hall Coefficient (HC) in a Cylindrycal Quantum Wire (CQW) with an infinite potential (for electron – confined optical phonons scattering). Consider a case where CQW is placed in a perpendicular magnetic field , a constant - electric field  and an intense electromagnetic wave . By using the quantum kinetic equation for electrons interacting with Confined Optical Phonon (COP), we obtain analytical expressions for (HC), which are different from in comparison to those obtained for the HC in the case of normal bulk semiconductor and in the case of cylindrycal quantum wire with electron – unconfined phonons scattering mechanism. Numerical calculations are also applied for AlGaAs/GaAs/AlGaAs cylindrycal quantum wire, we see the HC depends on magnetic field B, temperature T, frequency Ω and amplitude E0 of laser radiation and especially quantum index m1 and m2 characterizing the phonon confinement. This influence is due to the quantum index m1 and m2, which makes an increase of Hall coefficient by 2,3 times in comparition with the case of unconfined phonons. When the quantum number m1 and m2 goes to zero, the result is the same as in the case of unconfined phonons.

Polar Optical Phonon Instability and Intervalley Transfer in Gallium Nitride

1998 ◽  
Vol 512 ◽  
Author(s):  
B. E. Foutz ◽  
S. K. O'leary ◽  
M. S. Shur ◽  
L. F. Eastman ◽  
B. L. Gelmont ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Analytical Model ◽  
Optical Phonon ◽  
Room Temperature ◽  
Phonon Scattering ◽  
Polar Optical Phonon ◽  
Scattering Mechanism ◽  
Loss Mechanism ◽  
One Dimensional ◽  
Optical Phonon Scattering

ABSTRACTWe develop a simple, one-dimensional, analytical model, which describes electron transport in gallium nitride. We focus on the polar optical phonon scattering mechanism, as this is the dominant energy loss mechanism at room temperature. Equating the power gained from the field with that lost through scattering, we demonstrate that beyond a critical electric field, 114 kV/cm at T = 300 K, the power gained from the field exceeds that lost due to polar optical phonon scattering. This polar optical phonon instability leads to a dramatic increase in the electron energy, this being responsible for the onset of intervalley transitions. The predictions of our analytical model are compared with those of Monte Carlo simulations, and are found to be in satisfactory agreement.

Ultrafast Electron−Optical Phonon Scattering and Quasiparticle Lifetime in CVD-Grown Graphene

ACS Nano ◽  
2011 ◽  
Vol 5 (4) ◽  
pp. 3278-3283 ◽  
Author(s):  
Jingzhi Shang ◽  
Ting Yu ◽  
Jianyi Lin ◽  
Gagik G. Gurzadyan
Keyword(s):  
Optical Phonon ◽  
Phonon Scattering ◽  
Optical Phonon Scattering ◽  
Quasiparticle Lifetime ◽  
Grown Graphene
Sign in / Sign up

Export Citation Format

Share Document