scholarly journals Effect of electron-phonon interaction on the formation of one-dimensional electronic states in coupled Cl vacancies

2015 ◽  
Vol 91 (23) ◽  
Author(s):  
Bruno Schuler ◽  
Mats Persson ◽  
Sami Paavilainen ◽  
Niko Pavliček ◽  
Leo Gross ◽  
...  
Keyword(s):  
Electronic States ◽  
Phonon Interaction ◽  
One Dimensional ◽  
Electron Phonon Interaction

Peculiarities of the Electron-Phonon Interaction in Graphite Containing Metallic Intercalated Layers

2010 ◽  
Vol 297-301 ◽  
pp. 75-81 ◽  
Author(s):  
Alexander Feher ◽  
S.B. Feodosyev ◽  
I.A. Gospodarev ◽  
V.I. Grishaev ◽  
K.V. Kravchenko ◽  
...  
Keyword(s):  
Jacobi Matrix ◽  
Local Density ◽  
Dynamic Properties ◽  
Electronic States ◽  
Bcs Theory ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Density Of Electronic States ◽  
Eliashberg Equation ◽  
Phonon Spectra

The calculation of the local density of electronic states of graphene with vacancies, using the method of Jacobi matrix, was performed. It was shown that for atoms in the sublattice with a vacancy the local density of electronic states conserves the Dirac singularity, similarly as in an ideal graphene. A quasi-Dirac singularity was observed also in the phonon spectra of graphite for the atom displacements in the direction perpendicular to layers. Changes of phonon spectra of graphite intercalated with various metals were analyzed. On the basis of our results and using the BCS theory and Eliashberg equation we proposed what dynamic properties an intercalated graphite system should show to obtain an increased Tc.

Velocity Distribution of Electrons Escaping from a Potential Well

2000 ◽  
Vol 651 ◽  
Author(s):  
James P. Lavine
Keyword(s):  
Velocity Distribution ◽  
Classical Model ◽  
Thermionic Emission ◽  
Electron Velocity ◽  
Phonon Interaction ◽  
Electron Velocity Distribution ◽  
One Dimensional ◽  
Electron Phonon Interaction ◽  
Electron Escape ◽  
Effective Temperatures

AbstractElectron escape over a one-dimensional potential barrier is treated with a Monte Carlo method that incorporates simple models for the electron-phonon interaction. The consequences of these models are considered here through the calculation of the escaping electron velocity distribution and the electron energy distribution before escape. Effective temperatures are derived from both distributions. The numerical results are compared with those from the classical model of thermionic emission.

Screening of the electron-phonon interaction in quasi-one-dimensional semiconductor structures

1993 ◽  
Vol 48 (16) ◽  
pp. 12016-12022 ◽  
Author(s):  
G. Q. Hai ◽  
F. M. Peeters ◽  
J. T. Devreese ◽  
L. Wendler
Keyword(s):  
Phonon Interaction ◽  
One Dimensional ◽  
Electron Phonon Interaction ◽  
Semiconductor Structures

Electron–phonon interaction in three-, two- and one-dimensional ternary mixed crystals

2016 ◽  
Vol 30 (15) ◽  
pp. 1650182
Author(s):  
Junhua Hou ◽  
Yunpeng Fan
Keyword(s):  
Cell Volume ◽  
Effective Mass ◽  
Unit Cell Volume ◽  
Three Dimensional ◽  
Unit Cell ◽  
Mixed Crystals ◽  
Phonon Interaction ◽  
One Dimensional ◽  
Electron Phonon Interaction ◽  
Self Trapping

The electron–phonon (e–p) interaction in three-dimensional (3D), two-dimensional (2D) and one-dimensional (1D) ternary mixed crystals is studied. The e–p interaction Hamiltonians including the unit cell volume variation in ternary mixed crystals are obtained by using the modified random-element-isodisplacement model and Born–Huang method. The polaronic self-trapping energy and renormalized effective mass of GaAs[Formula: see text]Sb[Formula: see text], GaP[Formula: see text]As[Formula: see text] and GaP[Formula: see text]Sb[Formula: see text] compounds are numerically calculated. It is confirmed theoretically that the nonlinear variation of the self-trapping energy and effective mass with the composition is essential and the unit cell volume effects cannot be neglected except the weak e–p coupling. The dimensional effect cannot also be ignored.

THE TEMPERATURE DEPENDENCE OF THE ENERGY LEVELS OF SHALLOW DONOR IMPURITIES IN SILICON

1967 ◽  
Vol 45 (4) ◽  
pp. 1421-1438 ◽  
Author(s):  
C. Y. Cheung ◽  
Robert Barrie
Keyword(s):  
Temperature Dependence ◽  
Energy Levels ◽  
Electronic States ◽  
Shallow Donor ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Doped Silicon ◽  
Phosphorus Doped

A calculation is made of the temperature dependence of the energy levels of shallow donor impurities in silicon. This temperature dependence arises from the electron–phonon interaction and we consider mixing only of the {1s}, {2s), and {2p0} electronic states. A comparison is made with experiment for the case of phosphorus-doped silicon.

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