Screening of the electron-phonon interaction in quasi-one-dimensional semiconductor structures

1993 ◽  
Vol 48 (16) ◽  
pp. 12016-12022 ◽  
Author(s):  
G. Q. Hai ◽  
F. M. Peeters ◽  
J. T. Devreese ◽  
L. Wendler
2000 ◽  
Vol 651 ◽  
Author(s):  
James P. Lavine

AbstractElectron escape over a one-dimensional potential barrier is treated with a Monte Carlo method that incorporates simple models for the electron-phonon interaction. The consequences of these models are considered here through the calculation of the escaping electron velocity distribution and the electron energy distribution before escape. Effective temperatures are derived from both distributions. The numerical results are compared with those from the classical model of thermionic emission.


2016 ◽  
Vol 30 (15) ◽  
pp. 1650182
Author(s):  
Junhua Hou ◽  
Yunpeng Fan

The electron–phonon (e–p) interaction in three-dimensional (3D), two-dimensional (2D) and one-dimensional (1D) ternary mixed crystals is studied. The e–p interaction Hamiltonians including the unit cell volume variation in ternary mixed crystals are obtained by using the modified random-element-isodisplacement model and Born–Huang method. The polaronic self-trapping energy and renormalized effective mass of GaAs[Formula: see text]Sb[Formula: see text], GaP[Formula: see text]As[Formula: see text] and GaP[Formula: see text]Sb[Formula: see text] compounds are numerically calculated. It is confirmed theoretically that the nonlinear variation of the self-trapping energy and effective mass with the composition is essential and the unit cell volume effects cannot be neglected except the weak e–p coupling. The dimensional effect cannot also be ignored.


2015 ◽  
Vol 91 (23) ◽  
Author(s):  
Bruno Schuler ◽  
Mats Persson ◽  
Sami Paavilainen ◽  
Niko Pavliček ◽  
Leo Gross ◽  
...  

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