Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering

2015 ◽  
Vol 91 (3) ◽  
Author(s):  
A. Finke ◽  
M. Ruth ◽  
S. Scholz ◽  
A. Ludwig ◽  
A. D. Wieck ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Range ◽  
Strain Engineering

Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range

2011 ◽  
Vol 83 (7) ◽  
Author(s):  
H. Machhadani ◽  
M. Tchernycheva ◽  
S. Sakr ◽  
L. Rigutti ◽  
R. Colombelli ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Range ◽  
Near Infrared ◽  
Intersubband Absorption ◽  
Cubic Gan

Heterostructures with Strained InGaAs Quantum Wells for RCE Photodiode Applications in the 1.8–2 μm Spectral Range

2004 ◽  
Vol 829 ◽  
Author(s):  
Jadwiga Zynek ◽  
Agata Jasik ◽  
Jaroslaw Gaca ◽  
Marek Wojcik ◽  
Wlodzimierz Strupinski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Range ◽  
Resonant Cavity ◽  
Field Enhancement ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Synchrotron Source ◽  
Characterization Methods ◽  
Transmission Electron ◽  
Reflectivity Spectra

ABSTRACTThe results of the work on the technology and characterization methods of resonant cavity enhanced (RCE) photodiode heterostructures with strained InxGa1–xAs quantum wells (0.65≤x≤0.82), designed for the 1.8 - 2 μm spectral range, are presented. The heterostructures grown on InP by metalorganic chemical vapor deposition have been investigated by high-resolution X-ray diffraction with synchrotron source, transmission electron microscopy, photoluminescence and reflectivity spectra measurements. Non-resonant photodiodes fabricated from these epitaxial structures exhibit dark current densities below 10-6 A/cm2 and quantum efficiencies above 1 % (even without bias). These quantum efficiency values are a good basis for the resonant cavity enhancement. The optical field enhancement at quantum wells has been examined in resonant heterostructures before processing.

scholarly journals Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Artur Broda ◽  
Bartosz Jeżewski ◽  
Iwona Sankowska ◽  
Michał Szymański ◽  
Paweł Hoser ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Spectral Range ◽  
Molecular Beam ◽  
External Cavity ◽  
Cavity Surface ◽  
Emission Properties ◽  
Surface Emitting Laser

AbstractThe epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.

scholarly journals Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2553
Author(s):  
Valentin Jmerik ◽  
Dmitrii Nechaev ◽  
Kseniya Orekhova ◽  
Nikita Prasolov ◽  
Vladimir Kozlovsky ◽  
...  
Keyword(s):  
Electron Beam ◽  
Quantum Wells ◽  
Spectral Range ◽  
Stark Effect ◽  
Electron Gun ◽  
Spiral Growth ◽  
Surface Topology ◽  
Multiple Quantum ◽  
Uv Emitters ◽  
A Current

Monolayer (ML)-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma-assisted molecular beam epitaxy under controllable metal-rich conditions, which provides the spiral growth of densely packed atomically smooth hillocks without metal droplets. These structures have ML-stepped terrace-like surface topology in the entire QW thickness range from 0.75–7 ML and absence of stress at the well thickness below 2 ML. Satisfactory quantum confinement and mitigating the quantum-confined Stark effect in the stress-free MQW structures enable one to achieve the relatively bright UV cathodoluminescence with a narrow-line (~15 nm) in the sub-250-nm spectral range. The structures with many QWs (up to 400) exhibit the output optical power of ~1 W at 240 nm, when pumped by a standard thermionic-cathode (LaB6) electron gun at an electron energy of 20 keV and a current of 65 mA. This power is increased up to 11.8 W at an average excitation energy of 5 µJ per pulse, generated by the electron gun with a ferroelectric plasma cathode at an electron-beam energy of 12.5 keV and a current of 450 mA.

A fully verified theoretical analysis of strain-photonic coupling for quantum wells embedded in wavy nanoribbons

Nanoscale ◽  
2018 ◽  
Vol 10 (26) ◽  
pp. 12657-12664 ◽  
Author(s):  
Jiushuang Zhang ◽  
Yun Xu ◽  
Yu Jiang ◽  
Lin Bai ◽  
Huamin Chen ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Optoelectronic Devices ◽  
Strain Engineering ◽  
Research Field ◽  
Semiconductor Quantum Well

For optoelectronic devices, an attractive research field involves the flexible adjustment of the band gap in semiconductor quantum well (QW) structures by strain engineering.

Mode-Locked Lasers with “Thin” Quantum Wells in 1.55 μm Spectral Range

2018 ◽  
Vol 44 (2) ◽  
pp. 174-177 ◽  
Author(s):  
M. S. Buyalo ◽  
I. M. Gadzhiyev ◽  
N. D. Il’inskaya ◽  
A. A. Usikova ◽  
I. I. Novikov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Range ◽  
Mode Locked Lasers

Superluminescent diodes in the spectral range of 1.5–1.6 μm based on strain-compensated AlGaInAs/InP quantum wells

2020 ◽  
Vol 50 (9) ◽  
pp. 830-833 ◽  
Author(s):  
D R Sabitov ◽  
Yu L Ryaboshtan ◽  
V N Svetogorov ◽  
A A Padalitsa ◽  
M A Ladugin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Range ◽  
Superluminescent Diodes
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