Superluminescent diodes in the spectral range of 1.5–1.6 μm based on strain-compensated AlGaInAs/InP quantum wells

2020 ◽  
Vol 50 (9) ◽  
pp. 830-833 ◽  
Author(s):  
D R Sabitov ◽  
Yu L Ryaboshtan ◽  
V N Svetogorov ◽  
A A Padalitsa ◽  
M A Ladugin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Range ◽  
Superluminescent Diodes

Superluminescent diodes for visible (670nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorber

1993 ◽  
Vol 29 (6) ◽  
pp. 530 ◽  
Author(s):  
A.T. Semenov ◽  
V.R. Shidlovski ◽  
S.A. Safin ◽  
V.P. Konyaev ◽  
M.V. Zverkov
Keyword(s):  
Spectral Range ◽  
Superluminescent Diodes

Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering

2015 ◽  
Vol 91 (3) ◽  
Author(s):  
A. Finke ◽  
M. Ruth ◽  
S. Scholz ◽  
A. Ludwig ◽  
A. D. Wieck ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Range ◽  
Strain Engineering

Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range

2011 ◽  
Vol 83 (7) ◽  
Author(s):  
H. Machhadani ◽  
M. Tchernycheva ◽  
S. Sakr ◽  
L. Rigutti ◽  
R. Colombelli ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Range ◽  
Near Infrared ◽  
Intersubband Absorption ◽  
Cubic Gan

Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 — 800 nm

2011 ◽  
Vol 41 (8) ◽  
pp. 677-680 ◽  
Author(s):  
S N Il'chenko ◽  
Yu O Kostin ◽  
I A Kukushkin ◽  
M A Ladugin ◽  
P I Lapin ◽  
...  
Keyword(s):  
Spectral Range ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Superluminescent Diodes

Heterostructures with Strained InGaAs Quantum Wells for RCE Photodiode Applications in the 1.8–2 μm Spectral Range

2004 ◽  
Vol 829 ◽  
Author(s):  
Jadwiga Zynek ◽  
Agata Jasik ◽  
Jaroslaw Gaca ◽  
Marek Wojcik ◽  
Wlodzimierz Strupinski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Range ◽  
Resonant Cavity ◽  
Field Enhancement ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Synchrotron Source ◽  
Characterization Methods ◽  
Transmission Electron ◽  
Reflectivity Spectra

ABSTRACTThe results of the work on the technology and characterization methods of resonant cavity enhanced (RCE) photodiode heterostructures with strained InxGa1–xAs quantum wells (0.65≤x≤0.82), designed for the 1.8 - 2 μm spectral range, are presented. The heterostructures grown on InP by metalorganic chemical vapor deposition have been investigated by high-resolution X-ray diffraction with synchrotron source, transmission electron microscopy, photoluminescence and reflectivity spectra measurements. Non-resonant photodiodes fabricated from these epitaxial structures exhibit dark current densities below 10-6 A/cm2 and quantum efficiencies above 1 % (even without bias). These quantum efficiency values are a good basis for the resonant cavity enhancement. The optical field enhancement at quantum wells has been examined in resonant heterostructures before processing.

Superluminescent diodes of the 770–790-nm range based on semiconductor nanostructures with narrow quantum wells

2019 ◽  
Vol 49 (9) ◽  
pp. 810-813
Author(s):  
A S Anikeev ◽  
T A Bagaev ◽  
S N Il'chenko ◽  
M A Ladugin ◽  
A A Marmalyuk ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Semiconductor Nanostructures ◽  
Superluminescent Diodes ◽  
Nm Range

scholarly journals Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Artur Broda ◽  
Bartosz Jeżewski ◽  
Iwona Sankowska ◽  
Michał Szymański ◽  
Paweł Hoser ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Epitaxial Growth ◽  
Spectral Range ◽  
Molecular Beam ◽  
External Cavity ◽  
Cavity Surface ◽  
Emission Properties ◽  
Surface Emitting Laser

AbstractThe epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.

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