Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range

2011 ◽  
Vol 83 (7) ◽  
Author(s):  
H. Machhadani ◽  
M. Tchernycheva ◽  
S. Sakr ◽  
L. Rigutti ◽  
R. Colombelli ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Range ◽  
Near Infrared ◽  
Intersubband Absorption ◽  
Cubic Gan

scholarly journals Optimal design of gan-algan bragg-confined structures for intersubband absorption in the near-infrared spectral range

2003 ◽  
Vol 39 (10) ◽  
pp. 1297-1304 ◽  
Author(s):  
J. Radovanovic ◽  
V. Milanovic ◽  
Z. Ikonic ◽  
D. Indjin ◽  
V. Jovanovic ◽  
...  
Keyword(s):  
Optimal Design ◽  
Spectral Range ◽  
Near Infrared ◽  
Intersubband Absorption ◽  
Infrared Spectral Range ◽  
Infrared Spectral ◽  
Confined Structures

scholarly journals Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

2013 ◽  
Vol 113 (14) ◽  
pp. 143109 ◽  
Author(s):  
H. Machhadani ◽  
M. Beeler ◽  
S. Sakr ◽  
E. Warde ◽  
Y. Kotsar ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Systematic Study ◽  
Near Infrared ◽  
Intersubband Absorption ◽  
Semipolar Gan

Near infrared intersubband absorption in cubic GaN/AlN superlattices

2007 ◽  
Vol 1055 ◽  
Author(s):  
Eric A. DeCuir ◽  
Emil Fred ◽  
Omar Manasreh ◽  
Jorg Schormann ◽  
Donat J. As ◽  
...  
Keyword(s):  
Room Temperature ◽  
Near Infrared ◽  
State Energy ◽  
Intersubband Transitions ◽  
Electrochemical Capacitance ◽  
Intersubband Absorption ◽  
Transfer Matrix Approach ◽  
Capacitance Voltage ◽  
Cubic Gan ◽  
Superlattice Structures

ABSTRACTRoom temperature near-infrared intersubband transitions were observed in MBE grown non-polar cubic GaN/AlN superlattice structures. The peak wavelengths of these transitions were observed in the spectral region of 1.5–2.0 μm and were theoretically supported using a transfer matrix approach. All samples were unintentionally doped and grown on 3C-SiC substrates with a 100 nm GaN buffer. Each structure consisted of a 20 periods of GaN/AlN superlattice capped with 100nm of GaN. The thickness of the AlN barrier was fixed at 1.35, while the thickness of the GaN well was varied between 1.6 and 2.1nm. Electrochemical Capacitance Voltage (ECV) measurements allowed direct measurement of the intrinsic carrier concentration in a thick unintentionally doped cubic GaN layer, which confirmed sufficient population of the ground state energy level.

Near-infrared intersubband absorption in nonpolar cubic GaN∕AlN superlattices

2007 ◽  
Vol 91 (4) ◽  
pp. 041911 ◽  
Author(s):  
E. A. DeCuir ◽  
E. Fred ◽  
M. O. Manasreh ◽  
J. Schörmann ◽  
D. J. As ◽  
...  
Keyword(s):  
Near Infrared ◽  
Intersubband Absorption ◽  
Cubic Gan

Calculation of Near-Infrared Intersubband Absorption Spectra in GaN/AlN Quantum Wells

2003 ◽  
Vol 42 (Part 1, No. 1) ◽  
pp. 132-139 ◽  
Author(s):  
Nobuo Suzuki ◽  
Norio Iizuka ◽  
Kei Kaneko
Keyword(s):  
Quantum Wells ◽  
Absorption Spectra ◽  
Near Infrared ◽  
Intersubband Absorption
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