Thermally enhanced photoinduced electron emission from nitrogen-doped diamond films on silicon substrates

2014 ◽  
Vol 90 (12) ◽  
Author(s):  
Tianyin Sun ◽  
Franz A. M. Koeck ◽  
Aram Rezikyan ◽  
Michael M. J. Treacy ◽  
Robert J. Nemanich
Keyword(s):  
Electron Emission ◽  
Diamond Films ◽  
Silicon Substrates ◽  
Nitrogen Doped

Photo induced electron emission from nitrogen doped diamond films on silicon

2013 ◽  
Author(s):  
Tianyin Sun ◽  
Franz A.M. Koeck ◽  
Aram Rezikyan ◽  
Michael M.J. Treacy ◽  
Robert J. Nemanich
Keyword(s):  
Electron Emission ◽  
Diamond Films ◽  
Nitrogen Doped

Highly conductive nitrogen-doped ultrananocrystalline diamond films with enhanced field emission properties: triethylamine as a new nitrogen source

2016 ◽  
Vol 4 (21) ◽  
pp. 4778-4785 ◽  
Author(s):  
Wen Yuan ◽  
Liping Fang ◽  
Zhen Feng ◽  
Zexiang Chen ◽  
Jianwu Wen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Nitrogen Source ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Nitrogen Doped ◽  
Field Emission Properties ◽  
Ultrananocrystalline Diamond

In this study, triethylamine (TEA) dissolved in the methanol was used as a liquid nitrogen source to synthesize nitrogen-doped ultrananocrystalline diamond (N-UNCD) films on silicon substrates via microwave plasma enhanced chemical vapor deposition (MPCVD).

In situ reactivation of low-temperature thermionic electron emission from nitrogen doped diamond films by hydrogen exposure

2014 ◽  
Vol 50 ◽  
pp. 151-156 ◽  
Author(s):  
Vincenc Nemanič ◽  
Marko Žumer ◽  
Janez Kovač ◽  
Franz A.M. Koeck ◽  
Robert J. Nemanich
Keyword(s):  
Low Temperature ◽  
Electron Emission ◽  
Diamond Films ◽  
Nitrogen Doped ◽  
Hydrogen Exposure ◽  
Thermionic Electron Emission

scholarly journals Effect of Nitrogen on the Growth of (100)-, (110)-, and (111)-Oriented Diamond Films

2020 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Jen-Chuan Tung ◽  
Tsung-Che Li ◽  
Yen-Jui Teseng ◽  
Po-Liang Liu
Keyword(s):  
Growth Mechanism ◽  
Density Functional ◽  
Film Growth ◽  
Hydrogen Abstraction ◽  
Diamond Films ◽  
Activation Energies ◽  
Diamond Surface ◽  
Nitrogen Doped ◽  
Nitrogen Substitution ◽  
Diamond Film Growth

The aim of this research is the study of hydrogen abstraction reactions and methyl adsorption reactions on the surfaces of (100), (110), and (111) oriented nitrogen-doped diamond through first-principles density-functional calculations. The three steps of the growth mechanism for diamond thin films are hydrogen abstraction from the diamond surface, methyl adsorption on the diamond surface, and hydrogen abstraction from the methylated diamond surface. The activation energies for hydrogen abstraction from the surface of nitrogen-undoped and nitrogen-doped diamond (111) films were −0.64 and −2.95 eV, respectively. The results revealed that nitrogen substitution was beneficial for hydrogen abstraction and the subsequent adsorption of methyl molecules on the diamond (111) surface. The adsorption energy for methyl molecules on the diamond surface was generated during the growth of (100)-, (110)-, and (111)-oriented diamond films. Compared with nitrogen-doped diamond (100) films, adsorption energies for methyl molecule adsorption were by 0.14 and 0.69 eV higher for diamond (111) and (110) films, respectively. Moreover, compared with methylated diamond (100), the activation energies for hydrogen abstraction were by 0.36 and 1.25 eV higher from the surfaces of diamond (111) and (110), respectively. Growth mechanism simulations confirmed that nitrogen-doped diamond (100) films were preferred, which was in agreement with the experimental and theoretical observations of diamond film growth.

Local field emission features of thick diamond films on various silicon substrates

1999 ◽  
Vol 17 (2) ◽  
pp. 696 ◽  
Author(s):  
A. Göhl ◽  
T. Habermann ◽  
D. Nau ◽  
G. Müller ◽  
V. Raiko ◽  
...  
Keyword(s):  
Field Emission ◽  
Local Field ◽  
Diamond Films ◽  
Silicon Substrates
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