Local field emission features of thick diamond films on various silicon substrates

Author(s):  
A. Göhl ◽  
T. Habermann ◽  
D. Nau ◽  
G. Müller ◽  
V. Raiko ◽  
...  
Author(s):  
M. Park ◽  
D. R. McGregor ◽  
L. Bergman ◽  
R. J. Nemanich ◽  
J. J. Hren ◽  
...  

1998 ◽  
Vol 317 (1-2) ◽  
pp. 356-358 ◽  
Author(s):  
X Wang ◽  
J.P Zhao ◽  
Z.Y Chen ◽  
S.Q Yang ◽  
T.S Shi ◽  
...  

1989 ◽  
Vol 162 ◽  
Author(s):  
Sacharia Albin ◽  
Linwood Watkins

ABSTRACTCurrent-voltage characteristics of type Ia synthetic diamond, type IIb natural diamond and free-standing diamond films were measured before and after hydrogenation. The diamond films were polycrystalline, deposited on sacrificial silicon substrates using a microwave chemical vapor deposition process. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I-V characteristics of the samples. The concentration of electrically active hydrogen was determined from the I-V data. Hydrogen passivation of deep traps in diamond is clearly demonstrated.


2019 ◽  
Vol 807 ◽  
pp. 82-86
Author(s):  
Shu Yi Wei ◽  
Shi Jin Liu ◽  
Xiu Xia Zhang ◽  
Li Xin Guo

In this paper, nanodiamond films (NDF) were prepared on glass substrate by screen printing with nanodiamond. The NDF was printed with two layers and treated with different surface treatments.The field emission model of nanodiamond thin film was established. Field Emission of different Ratio was studyed. The mechanism by which the field emission characteristics of nanocrystalline diamond films are improved was analyzed.


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