scholarly journals How dielectric screening in two-dimensional crystals affects the convergence of excited-state calculations: Monolayer MoS2

2013 ◽  
Vol 88 (24) ◽  
Author(s):  
Falco Hüser ◽  
Thomas Olsen ◽  
Kristian S. Thygesen
Keyword(s):  
Excited State ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Dielectric Screening

Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS2 Matrix

2021 ◽  
Author(s):  
Xuewen Wang ◽  
Bolun Wang ◽  
Yonghuang Wu ◽  
Enze Wang ◽  
Hao Luo ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Selective Reaction

scholarly journals The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening

ACS Nano ◽  
2021 ◽  
Author(s):  
Soohyung Park ◽  
Thorsten Schultz ◽  
Dongguen Shin ◽  
Niklas Mutz ◽  
Areej Aljarb ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Dielectric Screening ◽  
Influence Of Substrate

scholarly journals Polyhydrogenated Graphene: Excited State Dynamics in Photo- and Electroactive Two-Dimensional Domains

2015 ◽  
Vol 137 (40) ◽  
pp. 13079-13086 ◽  
Author(s):  
Volker Strauss ◽  
Ricarda A. Schäfer ◽  
Frank Hauke ◽  
Andreas Hirsch ◽  
Dirk M. Guldi
Keyword(s):  
Excited State ◽  
Two Dimensional ◽  
Excited State Dynamics

scholarly journals Fast response photogating in monolayer MoS2 phototransistors

Nanoscale ◽  
2021 ◽  
Author(s):  
Daniel Vaquero ◽  
Vito Clericò ◽  
Juan Salvador-Sanchez ◽  
Elena Díaz ◽  
Francisco Dominguez-Adame ◽  
...  
Keyword(s):  
Transition Metal ◽  
Fast Response ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Intensive Research

Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by...

Excited-State Vibronic Dynamics of Bacteriorhodopsin from Two-Dimensional Electronic Photon Echo Spectroscopy and Multiconfigurational Quantum Chemistry

2020 ◽  
Vol 11 (10) ◽  
pp. 3889-3896
Author(s):  
Samer Gozem ◽  
Philip J. M. Johnson ◽  
Alexei Halpin ◽  
Hoi Ling Luk ◽  
Takefumi Morizumi ◽  
...  
Keyword(s):  
Excited State ◽  
Quantum Chemistry ◽  
Photon Echo ◽  
Two Dimensional

Improved carrier doping strategy of monolayer MoS2 through two-dimensional solid electrolyte of YBr3

2019 ◽  
Vol 114 (17) ◽  
pp. 171601 ◽  
Author(s):  
Maokun Wu ◽  
Pan Liu ◽  
Baojuan Xin ◽  
Luyan Li ◽  
Hong Dong ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Carrier Doping

scholarly journals Rigid Band Shifts in Two-Dimensional Semiconductors through External Dielectric Screening

2019 ◽  
Vol 123 (20) ◽  
Author(s):  
Lutz Waldecker ◽  
Archana Raja ◽  
Malte Rösner ◽  
Christina Steinke ◽  
Aaron Bostwick ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Dielectric Screening

scholarly journals A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1245 ◽  
Author(s):  
Kun Yang ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Wei Li ◽  
Tao Han
Keyword(s):  
Carrier Mobility ◽  
Transition Metal Dichalcogenides ◽  
Image Force ◽  
Drain Current ◽  
Equivalent Model ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
New Generation

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication processes. In order to overcome these problems, a large amount of research has been carried out so that the performance of the device has been greatly improved. However, most of these studies are based on complicated fabrication processes which are not conducive to the improvement of integration. In view of this problem, a horizontal-gate monolayer MoS2 transistor based on image force barrier reduction is proposed, in which the gate is in the same plane as the source and drain and comparable to back-gated transistors on-off ratios up to 1 × 104 have been obtained. Subsequently, by combining the Y-Function method (YFM) and the proposed diode equivalent model, it is verified that Schottky barrier height reduction is the main reason giving rise to the observed source-drain current variations. The proposed structure of the device not only provides a new idea for the high integration of two-dimensional devices, but also provides some help for the study of contact characteristics between two-dimensional materials and metals.

Superior Dielectric Screening in Two-Dimensional MoS2 Spirals

2017 ◽  
Vol 9 (43) ◽  
pp. 37941-37946 ◽  
Author(s):  
Thuc Hue Ly ◽  
Hyun Kim ◽  
Quoc Huy Thi ◽  
Shu Ping Lau ◽  
Jiong Zhao
Keyword(s):  
Two Dimensional ◽  
Dielectric Screening
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