scholarly journals The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening

ACS Nano ◽  
2021 ◽  
Author(s):  
Soohyung Park ◽  
Thorsten Schultz ◽  
Dongguen Shin ◽  
Niklas Mutz ◽  
Areej Aljarb ◽  
...  
2019 ◽  
Vol 123 (20) ◽  
Author(s):  
Lutz Waldecker ◽  
Archana Raja ◽  
Malte Rösner ◽  
Christina Steinke ◽  
Aaron Bostwick ◽  
...  

2017 ◽  
Vol 9 (43) ◽  
pp. 37941-37946 ◽  
Author(s):  
Thuc Hue Ly ◽  
Hyun Kim ◽  
Quoc Huy Thi ◽  
Shu Ping Lau ◽  
Jiong Zhao

2022 ◽  
Vol 2 ◽  

Although the screening of an external electric field, strongly influences the electronic states of two-dimensional material stack, it is not well understood. Magnetotransport measurements of twisted double bilayer graphene uncovered the screening of atomic layers.


2008 ◽  
Vol 59 ◽  
pp. 30-34 ◽  
Author(s):  
Noriaki Ikenaga ◽  
Yoichi Kishi ◽  
Zenjiro Yajima ◽  
Noriyuki Sakudo

In order to fabricate two-dimensional micro actuators with shape memory alloy films, it is especially important to evaluate the anisotropy of transformation strain that is caused by texture. In this paper, microstructures of sputter-deposited TiNi films are examined. The films of 1 μm in thickness are sputter-deposited on Si(001) substrates by RF magnetron multi-sputtering system equipped with four separate confocal sources as well as with substrate heating. Pure Ti and Ni targets of 50 mm in diameter are used for the sources. The films deposited at ambient temperature have been generally amorphous. However, we find that some films which are deposited at 773K of substrate temperature are crystalline, when we appropriately choose sputtering parameters such as source voltage and the distance between a target and the substrate. X-ray powder diffraction and pole figure measurements reveal that these films are oriented with {110}B2 parallel or inclined at 45 degree to the substrate. Furthermore, we also find that crystallized film is deposited even at 673K of substrate temperature by applying pulse bias voltage to the substrate.


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