Improved carrier doping strategy of monolayer MoS2 through two-dimensional solid electrolyte of YBr3

2019 ◽  
Vol 114 (17) ◽  
pp. 171601 ◽  
Author(s):  
Maokun Wu ◽  
Pan Liu ◽  
Baojuan Xin ◽  
Luyan Li ◽  
Hong Dong ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Carrier Doping

Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS2 Matrix

2021 ◽  
Author(s):  
Xuewen Wang ◽  
Bolun Wang ◽  
Yonghuang Wu ◽  
Enze Wang ◽  
Hao Luo ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Selective Reaction

scholarly journals Investigation of the Li-ion conduction behavior in the Li10GeP2S12 solid electrolyte by two-dimensional T1-spin alignment echo correlation NMR

2018 ◽  
Vol 294 ◽  
pp. 133-142 ◽  
Author(s):  
M.C. Paulus ◽  
M.F. Graf ◽  
P.P.R.M.L. Harks ◽  
A. Paulus ◽  
P.P.M. Schleker ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Two Dimensional ◽  
Spin Alignment ◽  
Ion Conduction ◽  
Conduction Behavior ◽  
Li Ion

scholarly journals Fast response photogating in monolayer MoS2 phototransistors

Nanoscale ◽  
2021 ◽  
Author(s):  
Daniel Vaquero ◽  
Vito Clericò ◽  
Juan Salvador-Sanchez ◽  
Elena Díaz ◽  
Francisco Dominguez-Adame ◽  
...  
Keyword(s):  
Transition Metal ◽  
Fast Response ◽  
Transition Metal Dichalcogenide ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Intensive Research

Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by...

Doping-stabilized two-dimensional black phosphorus

Nanoscale ◽  
2018 ◽  
Vol 10 (17) ◽  
pp. 7898-7904 ◽  
Author(s):  
Xiaoyu Xuan ◽  
Zhuhua Zhang ◽  
Wanlin Guo
Keyword(s):  
Black Phosphorus ◽  
Two Dimensional ◽  
Carrier Doping

Two-dimensional (2D) black phosphorus has nearly the same stability as 2D blue phosphorus and now can be exclusively stabilized over all other 2D allotropes by nitrogen and hole carrier doping.

scholarly journals A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1245 ◽  
Author(s):  
Kun Yang ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Wei Li ◽  
Tao Han
Keyword(s):  
Carrier Mobility ◽  
Transition Metal Dichalcogenides ◽  
Image Force ◽  
Drain Current ◽  
Equivalent Model ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
New Generation

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication processes. In order to overcome these problems, a large amount of research has been carried out so that the performance of the device has been greatly improved. However, most of these studies are based on complicated fabrication processes which are not conducive to the improvement of integration. In view of this problem, a horizontal-gate monolayer MoS2 transistor based on image force barrier reduction is proposed, in which the gate is in the same plane as the source and drain and comparable to back-gated transistors on-off ratios up to 1 × 104 have been obtained. Subsequently, by combining the Y-Function method (YFM) and the proposed diode equivalent model, it is verified that Schottky barrier height reduction is the main reason giving rise to the observed source-drain current variations. The proposed structure of the device not only provides a new idea for the high integration of two-dimensional devices, but also provides some help for the study of contact characteristics between two-dimensional materials and metals.

scholarly journals Novel Plasmonic Modes of Monolayer MoS$_2$ in the Presence of Spin-Orbit Interactions

2018 ◽  
Author(s):  
Z.H. Tao ◽  
H.M. Dong ◽  
Y.F. Duan ◽  
F. Huang
Keyword(s):  
Random Phase Approximation ◽  
Theoretical Study ◽  
Random Phase ◽  
Spin Orbit ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Spin Polarizability ◽  
Terahertz Devices ◽  
Spin Orbit Interactions ◽  
Plasmon Modes

We investigate on the plasmons of monolayer MoS2 in the presence of spin-orbit interactions (SOIs) under the random phase approximation. The theoretical study shows that two new and novel plasmonic modes can be achieved via inter spin sub-band transitions around the Fermi level duo to the SOIs. The plasmon modes are optic-like, which are very different from the plasmon modes reported recently in monolayer MoS2, and the other two-dimensional systems. The frequency of such plasmons increases with the increasing of the electron density or the spin polarizability, and decreases with the increasing of the wave vectors q. Our results exhibit some interesting features which can be utilized to the plasmonic and terahertz devices based on monolayer MoS2.

scholarly journals Difference frequency generation in monolayer MoS2

Nanoscale ◽  
2020 ◽  
Vol 12 (38) ◽  
pp. 19638-19643
Author(s):  
Yadong Wang ◽  
Masood Ghotbi ◽  
Susobhan Das ◽  
Yunyun Dai ◽  
Shisheng Li ◽  
...  
Keyword(s):  
Difference Frequency Generation ◽  
Layered Materials ◽  
Difference Frequency ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Parametric Generation ◽  
Optical Parametric ◽  
Optical Parametric Generation ◽  
Frequency Generation

We have demonstrated broadband difference frequency generation with monolayer MoS2, showing possibility of using two-dimensional layered materials for optical parametric generation, amplification and oscillation.

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