Auger recombination as the dominant nonradiative recombination channel in InN

2013 ◽  
Vol 87 (15) ◽  
Author(s):  
YongJin Cho ◽  
Xiang Lue ◽  
Martin Wienold ◽  
Manfred Ramsteiner ◽  
Holger T. Grahn ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Nonradiative Recombination ◽  
Recombination Channel

scholarly journals Reducing the impact of Auger recombination in quasi-2D perovskite light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yuanzhi Jiang ◽  
Minghuan Cui ◽  
Saisai Li ◽  
Changjiu Sun ◽  
Yanmin Huang ◽  
...  
Keyword(s):  
Recombination Rate ◽  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Quantum Yields ◽  
Excitation Density ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Order Of Magnitude ◽  
The Impact ◽  
Auger Recombination Rate

AbstractRapid Auger recombination represents an important challenge faced by quasi-2D perovskites, which induces resulting perovskite light-emitting diodes’ (PeLEDs) efficiency roll-off. In principle, Auger recombination rate is proportional to materials’ exciton binding energy (Eb). Thus, Auger recombination can be suppressed by reducing the corresponding materials’ Eb. Here, a polar molecule, p-fluorophenethylammonium, is employed to generate quasi-2D perovskites with reduced Eb. Recombination kinetics reveal the Auger recombination rate does decrease to one-order-of magnitude lower compared to its PEA+ analogues. After effective passivation, nonradiative recombination is greatly suppressed, which enables resulting films to exhibit outstanding photoluminescence quantum yields in a broad range of excitation density. We herein demonstrate the very efficient PeLEDs with a peak external quantum efficiency of 20.36%. More importantly, devices exhibit a record luminance of 82,480 cd m−2 due to the suppressed efficiency roll-off, which represent one of the brightest visible PeLEDs yet.

scholarly journals Auger Recombination in Quantum Well Laser with Participation of Electrons in Waveguide Region

2018 ◽  
Vol 57 (2) ◽  
pp. 193-198
Author(s):  
A.A. Karpova ◽  
D.M. Samosvat ◽  
A.G. Zegrya ◽  
G.G. Zegrya ◽  
V.E. Bugrov
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Auger Recombination ◽  
Nonradiative Recombination ◽  
Electron Hole ◽  
Quantum Well Laser ◽  
Semiconductor Quantum Wells ◽  
Electron Hole Pair ◽  
Quantum Well Width ◽  
Nonequilibrium Carriers

Abstract A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum wells is suggested and discussed. For a studied Auger recombination process the energy of localized electron-hole pair is transferred to barrier carriers due to Coulomb interaction. The analysis of the rate and the coefficient of this process is carried out. It is shown, that there exists two processes of thresholdless and quasithreshold types, and thresholdless one is dominant. The coefficient of studied process is a non-monotonous function of quantum well width having maximum in region of narrow quantum wells. Comparison of this process with CHCC process shows that these two processes of nonradiative recombination are competing in narrow quantum wells, but prevail at different quantum well widths.

Excitation and De-Excitation Mechanisms of Rare-Earth Ions in III-V Compounds: Optically Detected Microwave-Induced Impact Ionization of Yb Dopant in Inp

1993 ◽  
Vol 301 ◽  
Author(s):  
T. Gregorkiewicz ◽  
B.J. Heijmink Liesertr ◽  
I. Tsimperidis ◽  
I. de Maat-Gersdorf ◽  
C.A.J. Ammerlaan ◽  
...  
Keyword(s):  
Rare Earth ◽  
Direct Evidence ◽  
Impact Ionization ◽  
Rare Earth Ions ◽  
Nonradiative Recombination ◽  
Excitation Mechanisms ◽  
Optically Detected ◽  
Recombination Channel ◽  
Experimental Findings ◽  
First Time

ABSTRACTThe excitation mechanisms of rare-earth dopants in III-V semiconductors are being reviewed. The discussion is focused on ytterbium-doped InP crystals for which a particularly large amount of experimental data has been gathered. Here, the results obtained recently by optically detected microwave-induced impact ionization are being examined in detail. On the basis of the experimental findings it is argued that the intrashell luminescence is excited by an intermediate state involving binding of an exciton. Direct evidence for the existence of such a state, of pseudoacceptor type, will be given. The nonradiative recombination channel responsible for the fast decay of Yb luminescence will also be discussed and, for the first time, evidence for an Auger process will be presented. It will also be shown that the nonradiative channel may be effectively blocked by impact ionization of a participating carrier.

Exciton Luminescence of Single-Crystal GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
J.R. Müllhaüser ◽  
O. Brandt ◽  
H. Yang ◽  
K.H. Ploog
Keyword(s):  
Single Crystal ◽  
Excitation Density ◽  
Nonradiative Recombination ◽  
Exciton Luminescence ◽  
Exciton Dissociation ◽  
Nonradiative Recombination Center ◽  
Hole Trapping ◽  
Line Shape Analysis ◽  
Level Model ◽  
Recombination Channel

ABSTRACTDetailed photoluminescence (PL) studies of high-quality MBE-grown single-crystal cubic and hexagonal GaN are presented. We identify free and bound exciton recombination. By means of a line-shape analysis, we quantitatively analyze our spectra, which were taken as a function of temperature (T = 4 - 300 K) and excitation density (Pex = 0.3 - 200W/cm2). We show the dominant recombination channel at 300 K to be free-excitonic in nature with an internal small-signal quantum efficiency of 6 · 10−3 for both cubic and hexagonal material. Based on a three-level model, activation energies for exciton dissociation are evaluated. Radiative (τrad ≈ 2 ns) and nonradiative lifetimes (τe ≈ 1μs, τh ≈ 20 ps) are determined, where in the latter case, electron and hole trapping are considered separately. Furthermore, we show that the dominant nonradiative recombination center, being a hole trap, saturates at Pex ≥ 20 W/cm2.

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

Measurement of radiative and auger recombination rates in p-type InGaAsP diode lasers

1982 ◽  
Vol 18 (14) ◽  
pp. 595 ◽  
Author(s):  
C.B. Su ◽  
J. Schlafer ◽  
J. Manning ◽  
R. Olshansky
Keyword(s):  
Auger Recombination ◽  
Diode Lasers ◽  
Recombination Rates ◽  
P Type

scholarly journals The Effect of Nitrogen Incorporation on the Optical Properties of Si-Rich a-SiCx Films Deposited by VHF PECVD

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 637
Author(s):  
Hongliang Li ◽  
Zewen Lin ◽  
Yanqing Guo ◽  
Jie Song ◽  
Rui Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Near Infrared ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Nonradiative Recombination ◽  
Very High Frequency ◽  
N Content ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
N Incorporation

The influence of N incorporation on the optical properties of Si-rich a-SiCx films deposited by very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD) was investigated. The increase in N content in the films was found to cause a remarkable enhancement in photoluminescence (PL). Relative to the sample without N incorporation, the sample incorporated with 33% N showed a 22-fold improvement in PL. As the N content increased, the PL band gradually blueshifted from the near-infrared to the blue region, and the optical bandgap increased from 2.3 eV to 5.0 eV. The enhancement of PL was suggested mainly from the effective passivation of N to the nonradiative recombination centers in the samples. Given the strong PL and wide bandgap of the N incorporated samples, they were used to further design an anti-counterfeiting label.

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