Measurement of radiative and auger recombination rates in p-type InGaAsP diode lasers

1982 ◽  
Vol 18 (14) ◽  
pp. 595 ◽  
Author(s):  
C.B. Su ◽  
J. Schlafer ◽  
J. Manning ◽  
R. Olshansky
Keyword(s):  
Auger Recombination ◽  
Diode Lasers ◽  
Recombination Rates ◽  
P Type

Auger recombination in P-type GaSb

1981 ◽  
Vol 24-25 ◽  
pp. 697-700 ◽  
Author(s):  
A.N. Titkov ◽  
G.V. Benemanskaya ◽  
B.L. Gelmont ◽  
G.N. Iluridthe ◽  
Z.N. Sokolova
Keyword(s):  
Auger Recombination ◽  
P Type

Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Shereen M. Faraj ◽  
Shaimaa M. Abd Al-Baqi ◽  
Nasreen R. Jber ◽  
Johnny Fisher
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Diode Lasers ◽  
Focus Of Attention ◽  
Blue Laser ◽  
Uniform Structure ◽  
Porous Layers ◽  
Current Densities ◽  
P Type ◽  
532 Nm

Porous silicon (PS) has become the focus of attention in upgrading silicon for optoelectronics. In this work, various structures were produced depending on the formation parameters by photo-electrochemical etching (PECE) process of n- and p-type silicon wafer at different time durations (5–90 mins) and different current densities (5, 15, and 20 mA/cm2) for each set of time durations. Diode lasers of 405 nm, 473 nm, and 532 nm wavelengths, each 50 mW power, were used to illuminate the surface of the samples during the etching process. The results showed that controlled porous layers were achieved by using blue laser, giving uniform structure which can make it possible to dispense with expensive methods of patterning the silicon.

Pressure-Induced Tunable Electron Transfer and Auger Recombination Rates in CdSe/ZnS Quantum Dot–Anthraquinone Complexes

2019 ◽  
Vol 10 (11) ◽  
pp. 3064-3070 ◽  
Author(s):  
Huifang Zhao ◽  
Hang Yin ◽  
Xiaochun Liu ◽  
Hui Li ◽  
Ying Shi ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Quantum Dot ◽  
Auger Recombination ◽  
Recombination Rates

Auger Recombination in Antimony-Based, Strain-Balanced, Narrow-Band-Gap Superlattics

1997 ◽  
Vol 484 ◽  
Author(s):  
J. T. Olesberg ◽  
Thomas F. Boggess ◽  
S. A. Anson ◽  
D.-J. Jan ◽  
M. E. Flatté ◽  
...  
Keyword(s):  
Auger Recombination ◽  
Growth Direction ◽  
Bandgap Energy ◽  
Recombination Rates ◽  
Electron Hole ◽  
Time Resolved ◽  
All Optical ◽  
Semi Empirical ◽  
The Impact ◽  
Hole Recombination

AbstractTime-resolved all-optical techniques are used to measure the density and temperature dependence of electron-hole recombination in an InAs/GaInSb/InAs/AlGaInAsSb strain-balanced superlattice grown by molecular beam expitaxy on GaSb. This 4 μm bandgap structure, which has been designed for suppressed Auger recombination, is a candidate material for the active region of mid-infrared lasers. While carrier lifetime measurements at room temperature show unambiguous evidence of Auger recombination, the extracted Auger recombination rates are considerably lower than those reported for bulk materials of comparable bandgap energy. We find that the Auger rate saturates at carrier densities comparable to those required for degeneracy of the valence band, illustrating the impact of Fermi statistics on the Auger process. The measured results are compared with theoretical Auger rates computed using a band structure obtained from a semi-empirical 8-band K.p model. We find excellent agreement between theoretical and experimental results when Umklapp processes in the growth direction are included in the calculation. Measured recombination rates from 50 to 300 K are combined with calculated threshold carrier densities to determine a material To value for the superlattice.

A formalism for the indirect Auger effect. I

1976 ◽  
Vol 347 (1651) ◽  
pp. 547-564 ◽  
Keyword(s):  
Room Temperature ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Energy Gap ◽  
Electron Collision ◽  
Recombination Coefficient ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Auger Effect ◽  
Ionization Rates

A general formalism has been developed for the calculation of band-band Auger recombination and impact ionization rates in diamond and zinc blende type structures. The energy gap involved in the transition must be of order 1eV or greater, at room temperature, for direct gaps but is arbi­trary for indirect gaps. A recombination coefficient of 28.1 x 10 -32 cm 6 s -1 for GaP (hole-hole-electron collision) has been obtained in reasonable agreement with experiment. The formalism gives better theoretical values for Ge and Si than so far available. This has tended to reduce the recombination rates expected theoretically.

GaAs/AlGaAs Diode Lasers on Monolithic GaAs/Si Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
T. H. Windhorn ◽  
G. W. Turner ◽  
G. M. Metze
Keyword(s):  
Active Region ◽  
Diode Lasers ◽  
Si Substrate ◽  
Mole Percent ◽  
Double Heterostructure ◽  
Graded Index ◽  
Si Substrates ◽  
Stripe Width ◽  
Power Outputs ◽  
P Type

ABSTRACTOne approach to the development of optical interconnects between Si systems utilizes diode lasers fabricated in III-V epitaxial layers grown on Si wafers. We have fabricated double-heterostructure lasers in GaAs/AlGaAs layers grown on a Ge-coated Si substrate, and both asymmetric largeoptical- cavity (LOC) lasers and graded-index, separate-confinement heterostructure (GRIN-SCH) lasers in such layers grown directly on a Si substrate. The GaAs/AlGaAs layers were grown by molecular beam epitaxy on (100) p-Si substrates. Si and Be were used as the n- and p-type dopants, respectively. Oxide-defined stripe-geometry devices, 300 μm long, were fabricated using standard AuSn and CrAu metallizations for the n- and ptype contacts, respectively. The laser facets were formed by ion-beamassisted etching. The double-heterostructure devices (8 μm stripe width), in which the active region contained about 10 mole percent AlAs, were evaluated using pulsed bias at 77 K. They produced power outputs up to 3.3 mW per facet and exhibited thresholds as low as 170 mA. The LOC devices (4 μm stripe width), which had a GaAs active region, were characterized using pulsed bias at 300 K. These devices produced power outputs up to 27 mW per facet. The lowest threshold was 775 mA. The GRIN-SCH devices (4 μm stripe width), which incorporated a 70 Å GaAs quantum well active layer, were also characterized using pulsed bias at 300 K. These devices were not operated at power outputs above −5 mW. Their lowest threshold was 220 mA.

scholarly journals Auger recombination rates in ZnMgO from first principles

2011 ◽  
Vol 110 (8) ◽  
pp. 083103 ◽  
Author(s):  
Markus Heinemann ◽  
Christian Heiliger
Keyword(s):  
First Principles ◽  
Auger Recombination ◽  
Recombination Rates

Picosecond measurement of Auger recombination rates in InGaAs

1984 ◽  
Vol 45 (6) ◽  
pp. 652-654 ◽  
Author(s):  
M. E. Prise ◽  
M. R. Taghizadeh ◽  
S. D. Smith ◽  
B. S. Wherrett
Keyword(s):  
Auger Recombination ◽  
Recombination Rates
Sign in / Sign up

Export Citation Format

Share Document