Improved Thermal Stability of Gmr Spin Valve Films

1995 ◽  
Vol 384 ◽  
Author(s):  
R. D. Mcmichael ◽  
W. F. Egelhoff ◽  
Minh Ha

ABSTRACTIn order to improve the thermal stability of magnetic multilayer “spin valve” structures, we have measured the magnetic and magnetoresistive properties of a number of samples with the general structure of NiO/Co/Cu/Co/Cu/Co/NiO as a function of annealing time at 250 °C. The magnetoresistance (MR) of the samples annealed in air decreases proportionally to the square root of the annealing time. For samples annealed in a vacuum, the decrease in magnetoresistance is reduced, but not eliminated. Magnetometry of a vacuum annealed NiO/Co/NiO sample shows a magnetization reduction and a coercivity increase which suggest oxidation of the NiO-biased “outer” Co layers of the spin valve structure. For increasing NiObiased Co layer thickness, we show enhanced thermal stability and even increasing MR with annealing time for samples with the thickest outer Co layers.

1998 ◽  
Vol 22 (4_2) ◽  
pp. 489-492 ◽  
Author(s):  
H. Hoshiya ◽  
K. Meguro ◽  
Y. Hamakawa ◽  
R. Nakatani ◽  
H. Fukui

2004 ◽  
Vol 272-276 ◽  
pp. 1879-1880 ◽  
Author(s):  
S.Y. Yoon ◽  
D.H. Lee ◽  
D.M. Jeon ◽  
J.H. Kim ◽  
D.H. Yoon ◽  
...  

2006 ◽  
pp. 24-29
Author(s):  
Andreas Paetzold ◽  
Christian Loch ◽  
Klaus Röll

1998 ◽  
Vol 34 (4) ◽  
pp. 954-956 ◽  
Author(s):  
J. Fujikata ◽  
K. Hayashi ◽  
M. Saito ◽  
M. Nakada

2009 ◽  
Vol 26 (3) ◽  
pp. 037501 ◽  
Author(s):  
Zhou Guang-Hong ◽  
Wang Yin-Gang ◽  
Qi Xian-Jin

2002 ◽  
Vol 91 (4) ◽  
pp. 2172-2175 ◽  
Author(s):  
S. Colis ◽  
M. Guth ◽  
J. Arabski ◽  
A. Dinia ◽  
D. Muller

2002 ◽  
Vol 240 (1-3) ◽  
pp. 186-188 ◽  
Author(s):  
S. Colis ◽  
M. Guth ◽  
J. Arabski ◽  
A. Dinia ◽  
D. Muller

2002 ◽  
Vol 38 (5) ◽  
pp. 2764-2766 ◽  
Author(s):  
J.Y. Hwang ◽  
M.Y. Kim ◽  
J.R. Rhee ◽  
S.S. Lee ◽  
D.G. Hwang ◽  
...  

1995 ◽  
Vol 405 ◽  
Author(s):  
F. Hyuga ◽  
T. Nittono ◽  
K. Watanabe ◽  
T. Furuta

AbstractThermal stabilities of GaAs/InGaP and InGaP/(In)GaAs interfaces are investigated using InGaP/(In)GaAs/InGaP single quantum wells. Annealing is performed at a temperature range between 600 and 900 °C for 10 min. Positions and the full widths at half maximum (FWHM) of photoluminescence (PL) peaks are almost identical to those of as-grown ones up to 800 °C. Blue shifts of PL peaks and increased widths of their FWHM observed after 900 °C annealing are suppressed by shortening the annealing time to 0.1 sec. Annealing at 900 ‘C for 0.1 sec is sufficient to activate Si ions implanted into (In)GaAs layers. As a result, these thermal stabilities are able to provide high reliability and high performance of InGaP/(In)GaAs heterostructure MESFET ICs.


2000 ◽  
Vol 36 (5) ◽  
pp. 2566-2568 ◽  
Author(s):  
K. Inage ◽  
M. Sano ◽  
S. Araki ◽  
K. Terunuma ◽  
M. Sakai

Sign in / Sign up

Export Citation Format

Share Document