Size-dependent persistent photocurrent and surface band bending inm-axial GaN nanowires

2011 ◽  
Vol 84 (20) ◽  
Author(s):  
Hsin-Yi Chen ◽  
Reui-San Chen ◽  
Nitin K. Rajan ◽  
Fu-Chieh Chang ◽  
Li-Chyong Chen ◽  
...  
Keyword(s):  
Surface Band ◽  
Band Bending ◽  
Size Dependent ◽  
Gan Nanowires

Role of the surface density of states in understanding size-dependent surface band bending in GaN nanowires

2020 ◽  
Vol 510 ◽  
pp. 145502 ◽  
Author(s):  
Santanu Parida ◽  
Aloka Ranjan Sahoo ◽  
Kishore K. Madapu ◽  
S. Mathi Jaya ◽  
Sandip Dhara
Keyword(s):  
Density Of States ◽  
Surface Density ◽  
Surface Band ◽  
Band Bending ◽  
Size Dependent ◽  
Gan Nanowires

scholarly journals Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Anh Thi Nguyen ◽  
Ya-Wen Ho ◽  
Wei-Cheng Yu ◽  
Hsiao-Wen Zan ◽  
Hsin-Fei Meng ◽  
...  
Keyword(s):  
Ph Value ◽  
Chemical Species ◽  
Ionic Concentration ◽  
Physical Interaction ◽  
Basic Solution ◽  
Surface Band ◽  
Band Bending ◽  
Gan Nanowires ◽  
Pl Intensity ◽  
Redox Level

AbstractWe report response of photoluminescence (PL) from GaN nanowires without protection in solutions. The distinct response is not only toward pH but toward ionic concentration under same pH. The nanowires appear to be highly stable under aqueous solution with high ionic concentration and low pH value down to 1. We show that the PL has a reversible interaction with various types of acidic and salt solutions. The quantum states of nanowires are exposed to the external environment and have a direct physical interaction which depends on the anions of the acids. As the ionic concentration increases, the PL intensity goes up or down depending on the chemical species. The response results from a competition of change in surface band bending and charge transfer to redox level in solution. That of GaN films is reported for comparison as the effect of surface band bending can be neglected so that there are only slight variations in PL intensity for GaN films. Additionally, such physical interaction does not impact on the PL peaks in acids and salts, whereas there is a red shift on PL when the nanowires are in basic solution, say NH4OH, due to chemical etching occurred on the nanowires.

scholarly journals Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires

2015 ◽  
Vol 119 (36) ◽  
pp. 21251-21260 ◽  
Author(s):  
Avinash Patsha ◽  
Prasana Sahoo ◽  
S. Amirthapandian ◽  
Arun K. Prasad ◽  
A. Das ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Transfer Process ◽  
Charge Transfer Process ◽  
Surface Band ◽  
Band Bending ◽  
Gan Nanowires

scholarly journals Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

2021 ◽  
Vol 5 (4) ◽  
Author(s):  
Regina Ariskina ◽  
Michael Schnedler ◽  
Pablo D. Esquinazi ◽  
Ana Champi ◽  
Markus Stiller ◽  
...  
Keyword(s):  
Band Gap ◽  
Narrow Band ◽  
Surface Band ◽  
Band Bending ◽  
Atomic Force

Evidence of nitric-oxide-induced surface band bending of indium tin oxide

2004 ◽  
Vol 95 (11) ◽  
pp. 6273-6276 ◽  
Author(s):  
Jianqiao Hu ◽  
Jisheng Pan ◽  
Furong Zhu ◽  
Hao Gong
Keyword(s):  
Nitric Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Surface Band ◽  
Band Bending

Surface band bending and carrier dynamics in colloidal quantum dot solids

Nanoscale ◽  
2021 ◽  
Author(s):  
Pip C. J. Clark ◽  
Nathan K Lewis ◽  
Chun-Ren Ke ◽  
Rubén Ahumada-Lazo ◽  
Qian Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Carrier Dynamics ◽  
Charge Carriers ◽  
Surface Band ◽  
Band Bending ◽  
Colloidal Quantum Dot ◽  
Band Alignments

Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device....

The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions

2007 ◽  
Vol 1026 ◽  
Author(s):  
Augustus K. W. Chee ◽  
Conny Rodenburg ◽  
Colin John Humphreys
Keyword(s):  
Oxide Layer ◽  
Computer Modelling ◽  
Surface States ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Element Analysis ◽  
Surface Band ◽  
Band Bending ◽  
Wide Range ◽  
Se Doping

AbstractDetailed computer modelling using finite-element analysis was performed for Si p-n junctions to investigate the effects of surface states and doping concentrations on surface band-bending, surface junction potentials and external patch fields. The density of surface states was determined for our Si specimens with a native oxide layer. Our calculations show that for a typical density of surface states for a Si specimen with a native oxide layer, the effects of external patch fields are negligible and the SE doping contrast is due to the built-in voltage across the p-n junction modified by surface band-bending. There is a good agreement between the experimental doping contrast and the calculated junction potential just below the surface, taking into account surface states, for a wide range of doping concentrations.

scholarly journals Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

2004 ◽  
Vol 84 (16) ◽  
pp. 3070-3072 ◽  
Author(s):  
Sang-Jun Cho ◽  
Seydi Doğan ◽  
Shahriar Sabuktagin ◽  
Michael A. Reshchikov ◽  
Daniel K. Johnstone ◽  
...  
Keyword(s):  
Surface Potential ◽  
Electric Force ◽  
Surface Band ◽  
Band Bending ◽  
Force Microscopy ◽  
Electric Force Microscopy

Effect of near-surface band bending on dopant profiles in ion-implanted silicon

2004 ◽  
Vol 95 (3) ◽  
pp. 1134-1140 ◽  
Author(s):  
Michael Y. L. Jung ◽  
Rudiyanto Gunawan ◽  
Richard D. Braatz ◽  
E. G. Seebauer
Keyword(s):  
Surface Band ◽  
Band Bending ◽  
Near Surface ◽  
Dopant Profiles ◽  
Ion Implanted
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