Role of the surface density of states in understanding size-dependent surface band bending in GaN nanowires

2020 ◽  
Vol 510 ◽  
pp. 145502 ◽  
Author(s):  
Santanu Parida ◽  
Aloka Ranjan Sahoo ◽  
Kishore K. Madapu ◽  
S. Mathi Jaya ◽  
Sandip Dhara
Keyword(s):  
Density Of States ◽  
Surface Density ◽  
Surface Band ◽  
Band Bending ◽  
Size Dependent ◽  
Gan Nanowires

Size-dependent persistent photocurrent and surface band bending inm-axial GaN nanowires

2011 ◽  
Vol 84 (20) ◽  
Author(s):  
Hsin-Yi Chen ◽  
Reui-San Chen ◽  
Nitin K. Rajan ◽  
Fu-Chieh Chang ◽  
Li-Chyong Chen ◽  
...  
Keyword(s):  
Surface Band ◽  
Band Bending ◽  
Size Dependent ◽  
Gan Nanowires

Role of surface band bending in residual conductivity formation in epitaxial GaAs films

1975 ◽  
Vol 30 (2) ◽  
pp. 755-763 ◽  
Author(s):  
T. N. Sitenko ◽  
I. P. Tyagulskii ◽  
V. I. Lyashenko ◽  
V. S. Lisenko
Keyword(s):  
Surface Band ◽  
Band Bending ◽  
Epitaxial Gaas ◽  
Gaas Films

Role of Surfaces and Interfaces for the Electronic Properties of Conducting Oxides

2001 ◽  
Vol 666 ◽  
Author(s):  
Andreas Klein
Keyword(s):  
Work Function ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
Surface Band ◽  
Band Bending ◽  
Conducting Oxides ◽  
Degenerate Semiconductors ◽  
Surfaces And Interfaces

ABSTRACTTransparent conductive oxides (TCOs) are generally considered as degenerate semiconductors doped intrinsically by oxygen vacancies and by intentionally added dopants. For some applications a high work function is required in addition to high conductivity and it is desired to tune both properties independently. To increase the work function, the distance between the Fermi energy and the vacuum level must increase, which can be realized either by electronic surface dipoles or by space charge layers. Photoelectron spectroscopy data of in-situ prepared samples clearly show that highly doped TCOs can show surface band bending of the order of 1 eV. It is further shown that the band alignment at heterointerfaces between TCOs and other materials, which are crucial for many devices, are also affected by such band bending. The origin of the band bending, which seems to be general to all TCOs, depends on TCO thin film and surface processing conditions. The implication of surface band bending on the electronic properties of thin films and interfaces are discussed.

scholarly journals Stable and Reversible Photoluminescence from GaN Nanowires in Solution Tuning by Ionic Concentration

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Anh Thi Nguyen ◽  
Ya-Wen Ho ◽  
Wei-Cheng Yu ◽  
Hsiao-Wen Zan ◽  
Hsin-Fei Meng ◽  
...  
Keyword(s):  
Ph Value ◽  
Chemical Species ◽  
Ionic Concentration ◽  
Physical Interaction ◽  
Basic Solution ◽  
Surface Band ◽  
Band Bending ◽  
Gan Nanowires ◽  
Pl Intensity ◽  
Redox Level

AbstractWe report response of photoluminescence (PL) from GaN nanowires without protection in solutions. The distinct response is not only toward pH but toward ionic concentration under same pH. The nanowires appear to be highly stable under aqueous solution with high ionic concentration and low pH value down to 1. We show that the PL has a reversible interaction with various types of acidic and salt solutions. The quantum states of nanowires are exposed to the external environment and have a direct physical interaction which depends on the anions of the acids. As the ionic concentration increases, the PL intensity goes up or down depending on the chemical species. The response results from a competition of change in surface band bending and charge transfer to redox level in solution. That of GaN films is reported for comparison as the effect of surface band bending can be neglected so that there are only slight variations in PL intensity for GaN films. Additionally, such physical interaction does not impact on the PL peaks in acids and salts, whereas there is a red shift on PL when the nanowires are in basic solution, say NH4OH, due to chemical etching occurred on the nanowires.

scholarly journals Carrier Collection into InGaAs/GaAs Quantum Well: Role of Surface Band Bending

1992 ◽  
Vol 82 (4) ◽  
pp. 660-663
Author(s):  
G. Ambrazevičius ◽  
S. Marcinkevičius ◽  
T. Lideikis ◽  
K. Naudžius
Keyword(s):  
Quantum Well ◽  
Surface Band ◽  
Band Bending ◽  
Carrier Collection

scholarly journals Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires

2015 ◽  
Vol 119 (36) ◽  
pp. 21251-21260 ◽  
Author(s):  
Avinash Patsha ◽  
Prasana Sahoo ◽  
S. Amirthapandian ◽  
Arun K. Prasad ◽  
A. Das ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Transfer Process ◽  
Charge Transfer Process ◽  
Surface Band ◽  
Band Bending ◽  
Gan Nanowires

The role of rough surface in the size-dependent behavior upon nano-indentation

2021 ◽  
pp. 103836
Author(s):  
Ding Tang ◽  
Leilei Zhao ◽  
Huamiao Wang ◽  
Dayong Li ◽  
Yinghong Peng ◽  
...  
Keyword(s):  
Rough Surface ◽  
Nano Indentation ◽  
Size Dependent ◽  
Dependent Behavior

scholarly journals Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

2021 ◽  
Vol 5 (4) ◽  
Author(s):  
Regina Ariskina ◽  
Michael Schnedler ◽  
Pablo D. Esquinazi ◽  
Ana Champi ◽  
Markus Stiller ◽  
...  
Keyword(s):  
Band Gap ◽  
Narrow Band ◽  
Surface Band ◽  
Band Bending ◽  
Atomic Force

Evidence of nitric-oxide-induced surface band bending of indium tin oxide

2004 ◽  
Vol 95 (11) ◽  
pp. 6273-6276 ◽  
Author(s):  
Jianqiao Hu ◽  
Jisheng Pan ◽  
Furong Zhu ◽  
Hao Gong
Keyword(s):  
Nitric Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Surface Band ◽  
Band Bending
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