Effects of Crystallographic Planes on Focused Ion Beam Milled Patterns of Single Crystal Diamonds

2012 ◽  
Vol 1395 ◽  
Author(s):  
Rustin Golnabi ◽  
Won I. Lee ◽  
Deok-Yang Kim ◽  
Glen R. Kowach

ABSTRACTFocused ion beam (FIB) milling of diamonds has been investigated in various ways to create desired structures on diamonds, but not much research has been reported on the effects of crystal orientation, i.e. {100}, {110} and {111} of diamonds on FIB milling. In our previous work, it was noted that focused ion beam milling may develop preferred etched directions related to the crystal orientation of crystalline diamonds. In order to further investigate the phenomenon, a focused beam of 30 kV Ga+ ions was utilized to generate various patterns on different crystallographic planes of single crystalline diamonds. The morphology of milled patterns has been monitored with various ion currents to find the relationship between crystal orientations of diamonds and their impacts on FIB milled patterns. The work showed significant differences in deformation among different crystal orientations of the single crystal diamond, and the largest area of milling in {111} crystallographic planes.

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2871
Author(s):  
Qiuling Wen ◽  
Xinyu Wei ◽  
Feng Jiang ◽  
Jing Lu ◽  
Xipeng Xu

Sapphire substrates with different crystal orientations are widely used in optoelectronic applications. In this work, focused ion beam (FIB) milling of single-crystal sapphire with A-, C-, and M-orientations was performed. The material removal rate (MRR) and surface roughness (Sa) of sapphire with the three crystal orientations after FIB etching were derived. The experimental results show that: The MRR of A-plane sapphire is slightly higher than that of C-plane and M-plane sapphires; the Sa of A-plane sapphire after FIB treatment is the smallest among the three different crystal orientations. These results imply that A-plane sapphire allows easier material removal during FIB milling compared with C-plane and M-plane sapphires. Moreover, the surface quality of A-plane sapphire after FIB milling is better than that of C-plane and M-plane sapphires. The theoretical calculation results show that the removal energy of aluminum ions and oxygen ions per square nanometer on the outermost surface of A-plane sapphire is the smallest. This also implies that material is more easily removed from the surface of A-plane sapphire than the surface of C-plane and M-plane sapphires by FIB milling. In addition, it is also found that higher MRR leads to lower Sa and better surface quality of sapphire for FIB etching.


2016 ◽  
Vol 70 ◽  
pp. 159-166 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Seiya Kuroda ◽  
Noboru Morita ◽  
Kazuhito Nishimura ◽  
Makoto Yamaguchi ◽  
...  

2014 ◽  
Vol 49 ◽  
pp. 14-18 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Kazuma Ozaki ◽  
Noboru Morita ◽  
Kazuhito Nishimura ◽  
Hideki Sasaoka

2016 ◽  
Vol 874 ◽  
pp. 543-548 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Kazuma Ozaki ◽  
Noboru Morita ◽  
Kazuhito Nishimura ◽  
Makoto Yamaguchi ◽  
...  

Texturing on the surface of cutting tools is an effective method to improve the friction and resultant machining performances of the tool. In this study, to fabricate nanotextures on various tools used for precision cutting, a patterning method on nanopolycrystalline diamond and cubic boron nitride tools was investigated using focused ion beam (FIB) irradiation and heat treatment. Patterning was possible using this method, and the patterning characteristics were different from those of single-crystal diamond. This method was more suitable for cutting tools compared with direct FIB machining because of its high efficiency and significantly low affected layer.


APL Photonics ◽  
2018 ◽  
Vol 3 (12) ◽  
pp. 126101 ◽  
Author(s):  
Teodoro Graziosi ◽  
Sichen Mi ◽  
Marcell Kiss ◽  
Niels Quack

2014 ◽  
Vol 38 (1) ◽  
pp. 174-182 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Tomoyuki Niwata ◽  
Noboru Morita ◽  
Kazuhito Nishimura ◽  
Hideki Sasaoka

2014 ◽  
Vol 2014.10 (0) ◽  
pp. 83-84
Author(s):  
Noritaka KAWASEGI ◽  
Kazuma OZAKI ◽  
Noboru MORITA ◽  
Hideki SASAOKA ◽  
Kazuhito NISHIMUR ◽  
...  

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