scholarly journals Spectral and optical properties of doped graphene with charged impurities in the self-consistent Born approximation

2010 ◽  
Vol 82 (24) ◽  
Author(s):  
F. de Juan ◽  
E. H. Hwang ◽  
M. A. H. Vozmediano
Keyword(s):  
Optical Properties ◽  
Born Approximation ◽  
The Self ◽  
Self Consistent ◽  
Doped Graphene

scholarly journals Quantum Transport Simulation of the DOS function, Self-Consistent Fields and Mobility in MOS Inversion Layers

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 21-25 ◽  
Author(s):  
Dragica Vasileska ◽  
Terry Eldridge ◽  
Paolo Bordone ◽  
David K. Ferry
Keyword(s):  
Quantum Transport ◽  
Born Approximation ◽  
Inversion Layer ◽  
The Self ◽  
Charge Densities ◽  
Self Energy ◽  
Self Consistent ◽  
Inversion Charge ◽  
Simulation Results ◽  
Subband Structure

We describe a simulation of the self-consistent fields and mobility in (100) Si-inversion layers for arbitrary inversion charge densities and temperatures. A nonequilibrium Green's functions formalism is employed for the state broadening and conductivity. The subband structure of the inversion layer electrons is calculated self-consistently by simultaneously solving the Schrödinger, Poisson and Dyson equations. The self-energy contributions from the various scattering mechanisms are calculated within the self-consistent Born approximation. Screening is treated within RPA. Simulation results suggest that the proposed theoretical model gives mobilities which are in excellent agreement with the experimental data.

scholarly journals Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self-consistent Tight-binding Calculations

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 469-473
Author(s):  
Andrea Reale ◽  
Aldo Di Carlo ◽  
Sara Pescetelli ◽  
Marco Paciotti ◽  
Paolo Lugli
Keyword(s):  
Optical Properties ◽  
Electronic Properties ◽  
Function Approximation ◽  
Tight Binding ◽  
The Self ◽  
Optical And Electronic Properties ◽  
Self Consistent ◽  
Binding Models ◽  
Band Profile ◽  
Band Mixing

A tight-binding models which account for band mixing, strain and external applied potentials in a self-consistent fashion has been developed. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. This model can be applied to direct and indirect gap semiconductors thus allowing for instance the self-consistent calculation of band profile and carrier control in pseudomorphic InGaAs/GaAs HEMTs and SiGe/Si MODFETs.

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