We describe a simulation of the self-consistent fields and mobility in (100) Si-inversion layers
for arbitrary inversion charge densities and temperatures. A nonequilibrium Green's functions
formalism is employed for the state broadening and conductivity. The subband structure of
the inversion layer electrons is calculated self-consistently by simultaneously solving the
Schrödinger, Poisson and Dyson equations. The self-energy contributions from the various
scattering mechanisms are calculated within the self-consistent Born approximation. Screening
is treated within RPA. Simulation results suggest that the proposed theoretical model
gives mobilities which are in excellent agreement with the experimental data.
Exploring the limits of the self-consistent Born approximation for inelastic electronic transport