scholarly journals Nonequilibrium inelastic electronic transport: Polarization effects and vertex corrections to the self-consistent Born approximation

2011 ◽  
Vol 84 (8) ◽  
Author(s):  
L. K. Dash ◽  
H. Ness ◽  
R. W. Godby
Keyword(s):  
Electronic Transport ◽  
Born Approximation ◽  
The Self ◽  
Polarization Effects ◽  
Vertex Corrections ◽  
Self Consistent

scholarly journals Quantum Transport Simulation of the DOS function, Self-Consistent Fields and Mobility in MOS Inversion Layers

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 21-25 ◽  
Author(s):  
Dragica Vasileska ◽  
Terry Eldridge ◽  
Paolo Bordone ◽  
David K. Ferry
Keyword(s):  
Quantum Transport ◽  
Born Approximation ◽  
Inversion Layer ◽  
The Self ◽  
Charge Densities ◽  
Self Energy ◽  
Self Consistent ◽  
Inversion Charge ◽  
Simulation Results ◽  
Subband Structure

We describe a simulation of the self-consistent fields and mobility in (100) Si-inversion layers for arbitrary inversion charge densities and temperatures. A nonequilibrium Green's functions formalism is employed for the state broadening and conductivity. The subband structure of the inversion layer electrons is calculated self-consistently by simultaneously solving the Schrödinger, Poisson and Dyson equations. The self-energy contributions from the various scattering mechanisms are calculated within the self-consistent Born approximation. Screening is treated within RPA. Simulation results suggest that the proposed theoretical model gives mobilities which are in excellent agreement with the experimental data.

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