Equivalence of the multilead approach to dephasing and the self-consistent Born approximation

1991 ◽  
Vol 43 (14) ◽  
pp. 11586-11594 ◽  
Author(s):  
Selman Hershfield
Keyword(s):  
Born Approximation ◽  
The Self ◽  
Self Consistent

scholarly journals Quantum Transport Simulation of the DOS function, Self-Consistent Fields and Mobility in MOS Inversion Layers

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 21-25 ◽  
Author(s):  
Dragica Vasileska ◽  
Terry Eldridge ◽  
Paolo Bordone ◽  
David K. Ferry
Keyword(s):  
Quantum Transport ◽  
Born Approximation ◽  
Inversion Layer ◽  
The Self ◽  
Charge Densities ◽  
Self Energy ◽  
Self Consistent ◽  
Inversion Charge ◽  
Simulation Results ◽  
Subband Structure

We describe a simulation of the self-consistent fields and mobility in (100) Si-inversion layers for arbitrary inversion charge densities and temperatures. A nonequilibrium Green's functions formalism is employed for the state broadening and conductivity. The subband structure of the inversion layer electrons is calculated self-consistently by simultaneously solving the Schrödinger, Poisson and Dyson equations. The self-energy contributions from the various scattering mechanisms are calculated within the self-consistent Born approximation. Screening is treated within RPA. Simulation results suggest that the proposed theoretical model gives mobilities which are in excellent agreement with the experimental data.

scholarly journals On the Evaluation of the Spin Galvanic Effect in Lattice Models with Rashba Spin-Orbit Coupling

2018 ◽  
Vol 3 (3) ◽  
pp. 22
Author(s):  
Götz Seibold ◽  
Sergio Caprara ◽  
Marco Grilli ◽  
Roberto Raimondi
Keyword(s):  
Born Approximation ◽  
Continuum Model ◽  
Lattice Models ◽  
The Self ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Oxide Interfaces ◽  
Rashba Spin ◽  
Self Consistent ◽  
A Charge

The spin galvanic effect (SGE) describes the conversion of a non-equilibrium spin polarization into a charge current and has recently attracted renewed interest due to the large conversion efficiency observed in oxide interfaces. An important factor in the SGE theory is disorder which ensures the stationarity of the conversion. Through this paper, we propose a procedure for the evaluation of the SGE on disordered lattices which can also be readily implemented for multiband systems. We demonstrate the performance of the method for a single-band Rashba model and compare our results with those obtained within the self-consistent Born approximation for a continuum model.

Sign in / Sign up

Export Citation Format

Share Document