Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors

Yoon-Suk Kim; Martijn Marsman; Georg Kresse; Fabien Tran; Peter Blaha

doi:10.1103/physrevb.82.205212

Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors

Physical Review B ◽

10.1103/physrevb.82.205212 ◽

2010 ◽

Vol 82 (20) ◽

Cited By ~ 208

Author(s):

Yoon-Suk Kim ◽

Martijn Marsman ◽

Georg Kresse ◽

Fabien Tran ◽

Peter Blaha

Keyword(s):

Band Structure ◽

Band Gap ◽

Effective Mass ◽

Direct Band Gap ◽

Direct Band

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Calculation of Conduction Band Structure Tensile Strained Ge1-xSnx Alloys for Achieving Direct Band Gap Materials

Laser & Optoelectronics Progress ◽

10.3788/lop57.091602 ◽

2020 ◽

Vol 57 (9) ◽

pp. 091602

Author(s):

孙钦钦 Sun Qinqin ◽

黄诗浩 Huang Shihao

Keyword(s):

Band Structure ◽

Band Gap ◽

Conduction Band ◽

Direct Band Gap ◽

Direct Band

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Novel electronic properties of two-dimensional AsxSby alloys studied using DFT

Journal of Materials Chemistry C ◽

10.1039/c8tc00079d ◽

2018 ◽

Vol 6 (11) ◽

pp. 2854-2861 ◽

Cited By ~ 7

Author(s):

N. Zhao ◽

Y. F. Zhu ◽

Q. Jiang

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Effective Mass ◽

Two Dimensional ◽

Direct Band Gap ◽

Direct Band

Monolayered α-AsxSby alloys harbor the direct band gap and the low effective mass in the certain component.

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Band structure of indium oxide: Indirect versus direct band gap

Physical Review B ◽

10.1103/physrevb.75.153205 ◽

2007 ◽

Vol 75 (15) ◽

Cited By ~ 150

Author(s):

Paul Erhart ◽

Andreas Klein ◽

Russell G. Egdell ◽

Karsten Albe

Keyword(s):

Band Structure ◽

Band Gap ◽

Indium Oxide ◽

Direct Band Gap ◽

Direct Band

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Effect of Disorder on the Conduction-Band Effective Mass, Valence-Band Spin-Orbit Splitting, and the Direct Band Gap in III-V Alloys

Physical Review B ◽

10.1103/physrevb.8.3794 ◽

1973 ◽

Vol 8 (8) ◽

pp. 3794-3798 ◽

Cited By ~ 119

Author(s):

Orazio Berolo ◽

John C. Woolley ◽

J. A. Van Vechten

Keyword(s):

Band Gap ◽

Effective Mass ◽

Valence Band ◽

Conduction Band ◽

Spin Orbit ◽

Orbit Splitting ◽

Direct Band Gap ◽

Spin Orbit Splitting ◽

Direct Band ◽

Effect Of Disorder

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S-Vacancy induced indirect-to-direct band gap transition in multilayer MoS2

Physical Chemistry Chemical Physics ◽

10.1039/d0cp04201c ◽

2020 ◽

Vol 22 (44) ◽

pp. 26005-26014

Author(s):

Bingyu Zhu ◽

Junyu Lang ◽

Yun Hang Hu

Keyword(s):

Band Structure ◽

Band Gap ◽

Two Dimensional ◽

Direct Band Gap ◽

Direct Band

Two-dimensional (2D) MoS2 has a tunable band structure.

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GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass

Applied Physics Letters ◽

10.1063/1.4931459 ◽

2015 ◽

Vol 107 (12) ◽

pp. 122107 ◽

Cited By ~ 91

Author(s):

Yonghong Hu ◽

Shengli Zhang ◽

Shaofa Sun ◽

Meiqiu Xie ◽

Bo Cai ◽

...

Keyword(s):

Band Gap ◽

Effective Mass ◽

Direct Band Gap ◽

Carrier Effective Mass ◽

Direct Band

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Analytical descriptions of the band structure of direct-band-gap zinc-blende-structure semiconductors in thek⋅pKane model

Physical Review B ◽

10.1103/physrevb.44.7993 ◽

1991 ◽

Vol 44 (15) ◽

pp. 7993-7998 ◽

Cited By ~ 8

Author(s):

H.-J. Drouhin ◽

J. Peretti

Keyword(s):

Band Structure ◽

Band Gap ◽

Direct Band Gap ◽

Zinc Blende ◽

Direct Band ◽

Zinc Blende Structure

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Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials

Semiconductor Science and Technology ◽

10.1088/0268-1242/22/7/012 ◽

2007 ◽

Vol 22 (7) ◽

pp. 742-748 ◽

Cited By ~ 150

Author(s):

Pairot Moontragoon ◽

Zoran Ikonić ◽

Paul Harrison

Keyword(s):

Band Structure ◽

Band Gap ◽

Direct Band Gap ◽

Band Structure Calculations ◽

Direct Band ◽

Structure Calculations

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Two-dimensional silicon phosphide: low effective mass and direct band gap for future devices applications

Journal of Materials Science ◽

10.1007/s10853-019-03753-9 ◽

2019 ◽

Vol 54 (18) ◽

pp. 11878-11888 ◽

Cited By ~ 5

Author(s):

Shivam Kansara ◽

Prabal Dev Bhuyan ◽

Yogesh Sonvane ◽

Sanjeev K. Gupta

Keyword(s):

Band Gap ◽

Effective Mass ◽

Two Dimensional ◽

Direct Band Gap ◽

Direct Band

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Development of Direct Band Gap Group IV Semiconductors with the Incorporation of Sn

10.21236/ada558773 ◽

2012 ◽

Author(s):

Hung Hsiang Cheng

Keyword(s):

Band Gap ◽

Group Iv ◽

Direct Band Gap ◽

Group Iv Semiconductors ◽

Direct Band

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