GeSe monolayer semiconductor with tunable direct band gap and small carrier effective mass

2015 ◽  
Vol 107 (12) ◽  
pp. 122107 ◽  
Author(s):  
Yonghong Hu ◽  
Shengli Zhang ◽  
Shaofa Sun ◽  
Meiqiu Xie ◽  
Bo Cai ◽  
...  
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Direct Band Gap ◽  
Carrier Effective Mass ◽  
Direct Band

Novel electronic properties of two-dimensional AsxSby alloys studied using DFT

2018 ◽  
Vol 6 (11) ◽  
pp. 2854-2861 ◽  
Author(s):  
N. Zhao ◽  
Y. F. Zhu ◽  
Q. Jiang
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Effective Mass ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band

Monolayered α-AsxSby alloys harbor the direct band gap and the low effective mass in the certain component.

Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors

2010 ◽  
Vol 82 (20) ◽  
Author(s):  
Yoon-Suk Kim ◽  
Martijn Marsman ◽  
Georg Kresse ◽  
Fabien Tran ◽  
Peter Blaha
Keyword(s):  
Band Structure ◽  
Band Gap ◽  
Effective Mass ◽  
Direct Band Gap ◽  
Direct Band

Two-dimensional silicon phosphide: low effective mass and direct band gap for future devices applications

2019 ◽  
Vol 54 (18) ◽  
pp. 11878-11888 ◽  
Author(s):  
Shivam Kansara ◽  
Prabal Dev Bhuyan ◽  
Yogesh Sonvane ◽  
Sanjeev K. Gupta
Keyword(s):  
Band Gap ◽  
Effective Mass ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

Theoretical Derivations of a Direct Band Gap Semiconductor of SiC Doped with Ge

2014 ◽  
Vol 44 (1) ◽  
pp. 167-176 ◽  
Author(s):  
Adit Ghosh ◽  
Chandrika Varadachari
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band
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