High-temperature elastic moduli of bulk nanostructuredn- andp-type silicon germanium

2010 ◽  
Vol 82 (4) ◽  
Author(s):  
J. R. Gladden ◽  
G. Li ◽  
R. Adebisi ◽  
S. Firdosy ◽  
T. Caillat ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Germanium ◽  
Elastic Moduli ◽  
Type Silicon

A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Long Wavelength ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

High-Temperature Contact Formation on n-Type Silicon: Basic Reactions and Contact Model for Seed-Layer Contacts

2010 ◽  
Vol 20 (3) ◽  
pp. 476-484 ◽  
Author(s):  
Matthias Hörteis ◽  
Tobias Gutberlet ◽  
Armin Reller ◽  
Stefan W. Glunz
Keyword(s):  
High Temperature ◽  
Seed Layer ◽  
Contact Model ◽  
Contact Formation ◽  
Type Silicon

The effect of synthesis parameters on transport properties of nanostructured bulk thermoelectric p-type silicon germanium alloy

2012 ◽  
Vol 209 (10) ◽  
pp. 2049-2058 ◽  
Author(s):  
Zahra Zamanipour ◽  
Xinghua Shi ◽  
Arash M. Dehkordi ◽  
Jerzy S. Krasinski ◽  
Daryoosh Vashaee
Keyword(s):  
Transport Properties ◽  
Silicon Germanium ◽  
Type Silicon ◽  
Synthesis Parameters ◽  
Germanium Alloy ◽  
P Type
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