The effect of synthesis parameters on transport properties of nanostructured bulk thermoelectric p-type silicon germanium alloy

2012 ◽  
Vol 209 (10) ◽  
pp. 2049-2058 ◽  
Author(s):  
Zahra Zamanipour ◽  
Xinghua Shi ◽  
Arash M. Dehkordi ◽  
Jerzy S. Krasinski ◽  
Daryoosh Vashaee
Keyword(s):  
Transport Properties ◽  
Silicon Germanium ◽  
Type Silicon ◽  
Synthesis Parameters ◽  
Germanium Alloy ◽  
P Type

A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Long Wavelength ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

57Fe Mössbauer investigations in p-type Silicon Germanium single crystals

2008 ◽  
Vol 188 (1-3) ◽  
pp. 11-17 ◽  
Author(s):  
D. Naidoo ◽  
H. P. Gunnlaugsson ◽  
K. Bharuth-Ram ◽  
V. V. Naicker ◽  
G. Weyer ◽  
...  
Keyword(s):  
Single Crystals ◽  
Silicon Germanium ◽  
57Fe Mössbauer ◽  
Type Silicon ◽  
P Type

Comparison of boron precipitation in p-type bulk nanostructured and polycrystalline silicon germanium alloy

2013 ◽  
Vol 113 (14) ◽  
pp. 143715 ◽  
Author(s):  
Zahra Zamanipour ◽  
Jerzy S. Krasinski ◽  
Daryoosh Vashaee
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Germanium Alloy ◽  
P Type

Electrical properties of lightly doped p-type silicon–germanium single crystals

1998 ◽  
Vol 83 (10) ◽  
pp. 5258-5263 ◽  
Author(s):  
P. Gaworzewski ◽  
K. Tittelbach-Helmrich ◽  
U. Penner ◽  
N. V. Abrosimov
Keyword(s):  
Electrical Properties ◽  
Single Crystals ◽  
Silicon Germanium ◽  
Type Silicon ◽  
P Type

Thermoelectric Properties of Silicon Germanium Alloy Nanocomposite Fabricated by Mechanical Alloying and Spark Plasma Sintering

2016 ◽  
Vol 703 ◽  
pp. 70-75 ◽  
Author(s):  
Zhen Ye Zhu ◽  
Shi Lei Guo
Keyword(s):  
Mechanical Alloying ◽  
Spark Plasma Sintering ◽  
Silicon Germanium ◽  
Figure Of Merit ◽  
Thermoelectric Figure ◽  
Long Wavelength ◽  
Plasma Sintering ◽  
Germanium Alloy ◽  
Spark Plasma ◽  
P Type

High dense p-type Si95Ge5 doped with nanoSi70Ge30B5particles thermoelectric materials were firstly fabricated by mechanical alloying (MA) and spark plasma sintering (SPS) method. The effects of different nanoSi70Ge30B5 doping content on the thermoelectric and phase properties were studied. A dimensionless thermoelectric figure-of-merit (ZT) of 0.47 at 710K in p-type nanocomposite bulk silicon germanium (SiGe) alloys is achieved. The enhancement of ZT is due to a large reduction of thermal conductivity caused by the increased grain boundaries of the numerous nanograins that effectively scatter long wavelength phonons.

Enhanced Thermoelectric Figure-of-Merit in Nanostructured p-type Silicon Germanium Bulk Alloys

Nano Letters ◽  
2008 ◽  
Vol 8 (12) ◽  
pp. 4670-4674 ◽  
Author(s):  
Giri Joshi ◽  
Hohyun Lee ◽  
Yucheng Lan ◽  
Xiaowei Wang ◽  
Gaohua Zhu ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Type Silicon ◽  
P Type ◽  
Bulk Alloys

Influence of in situ formed MoSi2 inclusions on the thermoelectrical properties of an N-type silicon–germanium alloy

2014 ◽  
Vol 64 ◽  
pp. 429-442 ◽  
Author(s):  
Katia Favier ◽  
Guillaume Bernard-Granger ◽  
Christelle Navone ◽  
Mathieu Soulier ◽  
Mathieu Boidot ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Type Silicon ◽  
Germanium Alloy
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