High-Temperature Contact Formation on n-Type Silicon: Basic Reactions and Contact Model for Seed-Layer Contacts

2010 ◽  
Vol 20 (3) ◽  
pp. 476-484 ◽  
Author(s):  
Matthias Hörteis ◽  
Tobias Gutberlet ◽  
Armin Reller ◽  
Stefan W. Glunz
Keyword(s):  
High Temperature ◽  
Seed Layer ◽  
Contact Model ◽  
Contact Formation ◽  
Type Silicon

A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Long Wavelength ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

Study of Contact Formation by High Temperature Deposition of Ni on SiC

2000 ◽  
Vol 338-342 ◽  
pp. 981-984 ◽  
Author(s):  
K. Robbie ◽  
S.T. Jemander ◽  
N. Lin ◽  
Christer Hallin ◽  
R. Erlandsson ◽  
...  
Keyword(s):  
High Temperature ◽  
Contact Formation ◽  
Temperature Deposition

scholarly journals Morphological and spectroscopic studies on the vertically aligned zinc oxide nanorods grown on low and high temperature deposited seed layer

2017 ◽  
Vol 51 (12) ◽  
pp. 1690
Author(s):  
A. Rayerfrancis ◽  
Bhargav P. Balaji ◽  
N. Ahmed ◽  
C. Balaji
Keyword(s):  
Zinc Oxide ◽  
High Temperature ◽  
Seed Layer ◽  
Spectroscopic Studies ◽  
Zinc Oxide Nanorods ◽  
Ultraviolet Region ◽  
Band Edge Emission ◽  
Electromagnetic Spectrum ◽  
Oxide Nanorods ◽  
Vertically Aligned

Vertically aligned zinc oxide nanorods were grown on low and high temperature deposited aluminium doped zinc oxide seed layer by hydrothermal method and annealed to improve crystallinity. The morphology of the seed layer and the grown nanorods were studied by field emission scanning electron microscopy characterization technique. The properties of the zinc oxide nanorods were analyzed using laser spectroscopic studies. Resonant Raman spectroscopy reveals the unique increase in the A1(LO) mode of vibration with increase in count. The luminescence property of the nanorods was studied with photoluminescence spectrometer. The vertically aligned zinc oxide nanorods show, the very high band edge emission in the ultraviolet region of the electromagnetic spectrum. DOI: 10.21883/FTP.2017.12.45186.8562

scholarly journals A Modified Interposer Fabrication Process by Copper Nano-Pillars Filled in Anodic Aluminum Oxide Film for 3D Electronic Package

2018 ◽  
Vol 8 (11) ◽  
pp. 2188 ◽  
Author(s):  
Chunjin Hang ◽  
He Zhang ◽  
Yanhong Tian ◽  
Chenxi Wang ◽  
Yuan Huang ◽  
...  
Keyword(s):  
High Temperature ◽  
Aluminum Oxide ◽  
Seed Layer ◽  
Anodic Aluminum Oxide ◽  
Pore Filling ◽  
Electronic Package ◽  
Electrodeposition Process ◽  
Anodic Aluminum Oxide Film ◽  
Anodic Aluminum ◽  
Reduction Processes

Though copper nano-pillars (CNPs) filled in anodic aluminum oxide (AAO) film has been developed for many years, the high pore-filling percentage in AAO is still a bottleneck. We have demonstrated a new electrodeposition method to fill CNPs in AAO without the seed layer which is required in the traditional electrodeposition process. CNPs with uniform heights were obtained and the pore-filling percentage reached up to 97.5%. Low current density is beneficial for the high pore-filling percentage due to the uniform growing rate in different nanoscale pores. The high temperature increased the diffusion velocity of ions and enhanced the pore filling percentage but also corroded the AAO film simultaneously. Results showed that CNPs grains with <220> orientation were fabricated. Electrodeposition with low electric current could contribute to the forming of CNPs with (220) preferred orientation due to the promotion of dehydration reduction processes. The thermal conductivities of Cu-AAO interposers reaches 92.34 W/(m·K) and 3.19 W/(m·K) in vertical and horizontal directions, respectively.

Elaboration of Core Si/Shell SiC Nanowires

2013 ◽  
Vol 740-742 ◽  
pp. 306-310
Author(s):  
Maelig Ollivier ◽  
Laurence Latu-Romain ◽  
Arnaud Mantoux ◽  
Mickaël Martin ◽  
Thierry Baron ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Nanowires ◽  
Atmospheric Pressure ◽  
Seed Layer ◽  
Si Nanowires ◽  
Protective Shell ◽  
Top Down ◽  
Preferential Growth ◽  
Sic Nanowires ◽  
Sem And Tem

Silicon nanowires obtained by a top-down approach have been carburized at high temperature and atmospheric pressure with two different gaseous precursors: CH4 and C3H8. These processes reveal core silicon / shell 3C-SiC nanowires. After being characterized by SEM, FIB-SEM and TEM microscopies, the 3C-SiC layer has been used as seed layer for the growth of epitaxial 3C-SiC on the nanowires. Preferential growth of 3C-SiC on the sidewalls of nanowires has been observed. Thanks to the biocompatibility of SiC compared to Si, this layer could act as a protective shell for biosensors based on Si nanowires transistor.

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