A model for the high‐temperature transport properties of heavily dopedn‐type silicon‐germanium alloys

1991 ◽  
Vol 69 (1) ◽  
pp. 331-341 ◽  
Author(s):  
Cronin B. Vining
1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.


2012 ◽  
Vol 209 (10) ◽  
pp. 2049-2058 ◽  
Author(s):  
Zahra Zamanipour ◽  
Xinghua Shi ◽  
Arash M. Dehkordi ◽  
Jerzy S. Krasinski ◽  
Daryoosh Vashaee

2010 ◽  
Vol 82 (4) ◽  
Author(s):  
J. R. Gladden ◽  
G. Li ◽  
R. Adebisi ◽  
S. Firdosy ◽  
T. Caillat ◽  
...  

Author(s):  
George McLane ◽  
Charles Wood ◽  
Jan Vandersande ◽  
Valvo Raag ◽  
Ben Heshmatpour

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