Calculated Valence-Band Densities of States and Photoemission Spectra of Diamond and Zinc-Blende Semiconductors

1973 ◽  
Vol 8 (6) ◽  
pp. 2786-2794 ◽  
Author(s):  
J. Chelikowsky ◽  
D. J. Chadi ◽  
Marvin L. Cohen
Keyword(s):  
Valence Band ◽  
Zinc Blende ◽  
Densities Of States

Accuracy of alloy partial densities of states as determined by valence-band photoelectron diffraction

1995 ◽  
Vol 51 (15) ◽  
pp. 9497-9507 ◽  
Author(s):  
A. Stuck ◽  
J. Osterwalder ◽  
T. Greber ◽  
L. Schlapbach ◽  
R. C. Albers ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Diffraction ◽  
Densities Of States

Local partial densities of states in CuInS2 upper valence band determined by soft-x-ray emission spectroscopy: Evidence for In 5p contribution

2005 ◽  
Vol 98 (1) ◽  
pp. 013704 ◽  
Author(s):  
L. Zhang ◽  
I. Konovalov ◽  
D. Wett ◽  
D. Schulze ◽  
R. Szargan ◽  
...  
Keyword(s):  
Valence Band ◽  
Emission Spectroscopy ◽  
X Ray ◽  
Densities Of States

Effective Densities of States in Conduction and Valence Bands in a-Si

1993 ◽  
Vol 297 ◽  
Author(s):  
JoŽE Furlan ◽  
Franc Smole ◽  
Pavle PopoviĆ
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Computer Simulations ◽  
Gaussian Distribution ◽  
Transport Equations ◽  
Densities Of States ◽  
Extended States ◽  
Valence Bands

Effective densities of states in conduction and valence band, Nc and Nv, are usually set to a fixed value of 1019 to 1020 cm−3 in all computer simulations of a-Si structures. In this contribution the densities Nc and Nv are analytically expressed for different selected extended states distributions. The derivatives d(lnNc)/dx and d(lnNv)/dx, representing specific terms in transport equations, are expressed as function of position dependent band structure. The effect of an increased disorder in heterojunction is simulated by Gaussian distribution of states in a linearly graded heterojunction region.

Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopy

1974 ◽  
Vol 9 (2) ◽  
pp. 600-621 ◽  
Author(s):  
L. Ley ◽  
R. A. Pollak ◽  
F. R. McFeely ◽  
S. P. Kowalczyk ◽  
D. A. Shirley
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Densities Of States

Band Tails and Thermal Disorder in Doped and Undoped Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

1990 ◽  
Vol 192 ◽  
Author(s):  
Samer Aljishi ◽  
J. David Cohen ◽  
Shu Jin ◽  
Lothar Ley
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Silicon Germanium ◽  
Total Yield ◽  
Structural Disorder ◽  
Band Tail ◽  
Characteristic Energy ◽  
Densities Of States ◽  
Thermal Disorder

ABSTRACTThe energy distribution and temperature dependence of the conduction and valence band tail density of states in a-Si:H and a-Si,Ge:H alloys is determined via total yield photoelectron spectroscopy. All films are observed to possess purely exponential conduction and valence band tail densities of states; however, the characteristic energy of the conduction band tail increases much more rapidly with temperature in the range of 300K to 550K than that of the valence band tail. This indicates that over that temperature range the conduction band tail is considerably more susceptible to thermal disorder than to structural disorder whereas the reverse holds for the valence band tail.

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