scholarly journals PHOTOEMISSION OVERVIEWS OF VALENCE BAND DENSITIES-OF-STATES FOR Ge, GaAs, GaP, InSb, ZnSe AND CdTe USING SYNCHROTRON RADIATION

1973 ◽  
Vol 34 (C6) ◽  
pp. C6-37-C6-44 ◽  
Author(s):  
D. E. EASTMAN ◽  
J. FREEOUF ◽  
M. ERBUDAK
1995 ◽  
Vol 51 (15) ◽  
pp. 9497-9507 ◽  
Author(s):  
A. Stuck ◽  
J. Osterwalder ◽  
T. Greber ◽  
L. Schlapbach ◽  
R. C. Albers ◽  
...  

2002 ◽  
Vol 09 (01) ◽  
pp. 469-472
Author(s):  
V. N. KOLOBANOV ◽  
I. A. KAMENSKIKH ◽  
V. V. MIKHAILIN ◽  
I. N. SHPINKOV ◽  
D. A. SPASSKY ◽  
...  

The optical properties of a wide series of the tungstates with the scheelite and wolframite crystal structure at the threshold of the fundamental absorption region were studied. New information about the influence of the electronic states forming the bottom of the conduction band and the top of the valence band on the formation of emission centers and mechanisms of energy transfer to these centers was obtained.


1981 ◽  
Vol 4 ◽  
Author(s):  
F.J. Himpsel ◽  
D.E. Eastman ◽  
P. Heimann ◽  
B. Reihl ◽  
C.W. White ◽  
...  

ABSTRACTWe have studied the valence band and surface-core-level states for laser-annealed, thermally-annealed, and cleaved Ge(111) and Si(l11) surfaces with high resolution photoelectronspectroscopy using synchrotron radiation. For the annealed surfaces we find two surface states near the top of the valence band as well as characteristic surface core level spectra. These indicate the existence of a common local bonding geometry for all these surfaces. We observe that the (1 × 1) and cleaved (2 × 1) surfaces are not related as recently reported for Si.


1995 ◽  
Vol 338 (1-3) ◽  
pp. 143-156 ◽  
Author(s):  
Christine Poncey ◽  
François Rochet ◽  
Georges Dufour ◽  
Henri Roulet ◽  
Fausto Sirotti ◽  
...  

1987 ◽  
Vol 189-190 ◽  
pp. A438
Author(s):  
P.A.P. Lindberg ◽  
L.I. Johansson ◽  
J.B. Lindström ◽  
D.S.L. Law

2005 ◽  
Vol 98 (1) ◽  
pp. 013704 ◽  
Author(s):  
L. Zhang ◽  
I. Konovalov ◽  
D. Wett ◽  
D. Schulze ◽  
R. Szargan ◽  
...  

2012 ◽  
Vol 229-231 ◽  
pp. 243-246
Author(s):  
I. Ulfat ◽  
J. Adell ◽  
P. Pal ◽  
J. Sadowski ◽  
L. Ilver ◽  
...  

(Ga,Mn)As is a model diluted ferromagnet system in which the atomic spins of Mn ions are ferromagnetically arranged due to the exchange interaction with valence band holes. An important tecchnological concern regarding this system has been approaches that might result in reduction of the density of Mn interstitial and increase in the content of Mn in order to make the system practically feasible. To accomplish the objective we report the results of our recent synchrotron radiation based spectroscopic investigations concening annealing induced modification of as-grown (Ga,Mn)As layers covered with Sb capping.


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