Accuracy of alloy partial densities of states as determined by valence-band photoelectron diffraction

1995 ◽  
Vol 51 (15) ◽  
pp. 9497-9507 ◽  
Author(s):  
A. Stuck ◽  
J. Osterwalder ◽  
T. Greber ◽  
L. Schlapbach ◽  
R. C. Albers ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Diffraction ◽  
Densities Of States

DICHROISM IN ANGLE-RESOLVED PHOTOEMISSION FROM Pt(111)

2002 ◽  
Vol 09 (02) ◽  
pp. 883-888 ◽  
Author(s):  
G. H. FECHER ◽  
J. BRAUN ◽  
A. OELSNER ◽  
CH. OSTERTAG ◽  
G. SCHÖNHENSE
Keyword(s):  
Circular Dichroism ◽  
Band Structure ◽  
Valence Band ◽  
Single Step ◽  
Core Level ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Band Emission ◽  
First Results ◽  
Circular Dichroïsm

The angular dependence of the circular dichroism in photoemission from Pt(111) was investigated for excitation with VUV and soft X-ray radiation. VUV excitation was used to probe band structure and the circular dichroism for valence band emission. The measurements are compared to full relativistic single step photoemission calculations. XPS was used to investigate the circular dichroism in emission from the 4f core level. In this case, the dichroism is induced by photoelectron diffraction. First results from single step core level calculations are compared to the experimental observations.

Local partial densities of states in CuInS2 upper valence band determined by soft-x-ray emission spectroscopy: Evidence for In 5p contribution

2005 ◽  
Vol 98 (1) ◽  
pp. 013704 ◽  
Author(s):  
L. Zhang ◽  
I. Konovalov ◽  
D. Wett ◽  
D. Schulze ◽  
R. Szargan ◽  
...  
Keyword(s):  
Valence Band ◽  
Emission Spectroscopy ◽  
X Ray ◽  
Densities Of States

X-ray photoelectron diffraction from a free-electron-metal valence band: Evidence for hole-state localization

1990 ◽  
Vol 64 (22) ◽  
pp. 2683-2686 ◽  
Author(s):  
J. Osterwalder ◽  
T. Greber ◽  
S. Hüfner ◽  
L. Schlapbach
Keyword(s):  
Valence Band ◽  
Free Electron ◽  
Hole State ◽  
X Ray ◽  
Photoelectron Diffraction

Effective Densities of States in Conduction and Valence Bands in a-Si

1993 ◽  
Vol 297 ◽  
Author(s):  
JoŽE Furlan ◽  
Franc Smole ◽  
Pavle PopoviĆ
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Computer Simulations ◽  
Gaussian Distribution ◽  
Transport Equations ◽  
Densities Of States ◽  
Extended States ◽  
Valence Bands

Effective densities of states in conduction and valence band, Nc and Nv, are usually set to a fixed value of 1019 to 1020 cm−3 in all computer simulations of a-Si structures. In this contribution the densities Nc and Nv are analytically expressed for different selected extended states distributions. The derivatives d(lnNc)/dx and d(lnNv)/dx, representing specific terms in transport equations, are expressed as function of position dependent band structure. The effect of an increased disorder in heterojunction is simulated by Gaussian distribution of states in a linearly graded heterojunction region.

Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopy

1974 ◽  
Vol 9 (2) ◽  
pp. 600-621 ◽  
Author(s):  
L. Ley ◽  
R. A. Pollak ◽  
F. R. McFeely ◽  
S. P. Kowalczyk ◽  
D. A. Shirley
Keyword(s):  
Valence Band ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Densities Of States
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